Li Ziyuan, Yuan Xiaoming, Fu Lan, Peng Kun, Wang Fan, Fu Xiao, Caroff Philippe, White Thomas P, Hoe Tan Hark, Jagadish Chennupati
Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 2601, Australia.
Nanotechnology. 2015 Nov 6;26(44):445202. doi: 10.1088/0957-4484/26/44/445202. Epub 2015 Oct 9.
Antimonide-based ternary III-V nanowires (NWs) allow for a tunable bandgap over a wide range, which is highly interesting for optoelectronics applications, and in particular for infrared photodetection. Here we demonstrate room temperature operation of GaAs0.56Sb0.44 NW infrared photodetectors grown by metal organic vapor phase epitaxy. These GaAs0.56Sb0.44 NWs have uniform axial composition and show p-type conductivity with a peak field-effect mobility of ∼12 cm(2) V(-1) s(-1)). Under light illumination, single GaAs0.56Sb0.44 NW photodetectors exhibited typical photoconductor behavior with an increased photocurrent observed with the increase of temperature owing to thermal activation of carrier trap states. A broadband infrared photoresponse with a long wavelength cutoff at ∼1.66 μm was obtained at room temperature. At a low operating bias voltage of 0.15 V a responsivity of 2.37 (1.44) A/W with corresponding detectivity of 1.08 × 10(9) (6.55 × 10(8)) cm√Hz/W were achieved at the wavelength of 1.3 (1.55) μm, indicating that ternary GaAs0.56Sb0.44 NWs are promising photodetector candidates for small footprint integrated optical telecommunication systems.
基于锑化物的三元III-V族纳米线（NWs）具有在很宽范围内可调的带隙，这对于光电子应用，特别是红外光电探测非常有吸引力。在此，我们展示了通过金属有机气相外延生长的GaAs0.56Sb0.44 NW红外光电探测器在室温下的工作情况。这些GaAs0.56Sb0.44 NWs具有均匀的轴向组成，并表现出p型导电性，峰值场效应迁移率约为12 cm² V⁻¹ s⁻¹。在光照下，单个GaAs0.56Sb0.44 NW光电探测器表现出典型的光电导行为，由于载流子陷阱态的热激活，随着温度升高观察到光电流增加。在室温下获得了截止波长约为1.66μm的宽带红外光响应。在0.15 V的低工作偏置电压下，在1.3（1.55）μm波长处实现了2.37（1.44）A/W的响应度以及相应的1.08×10⁹（6.55×10⁸）cm√Hz/W的探测率，这表明三元GaAs0.56Sb0.44 NWs是小型集成光通信系统中有前景的光电探测器候选材料。
