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原子层沉积纳米晶 BaTiO 薄膜中阳离子溶解度的扩展证据及其对电性能的强烈影响。

Evidence of extended cation solubility in atomic layer deposited nanocrystalline BaTiO thin films and its strong impact on the electrical properties.

机构信息

Department of Materials Science & Engineering, Drexel University, Philadelphia, Pennsylvania 19104, USA.

出版信息

Nanoscale. 2018 Jul 9;10(26):12515-12525. doi: 10.1039/c8nr01176a.

DOI:10.1039/c8nr01176a
PMID:29931017
Abstract

Thin films of ≈50 nm thickness with Ba/Ti-ratios ranging from 0.8 to 1.06 were prepared by depositing alternating layers of Ba(OH)2 and TiO2. Annealing at 750 °C promoted the solid-solid transformation into polycrystalline BaTiO3 films containing a mixture of the perovskite and the hexagonal polymorphs with average crystallite sizes smaller than 14 nm and without impurity phases. This, together with an increase of the cubic lattice parameters for Ba-rich films, suggests an extended metastable solubility range for the perovskite-phase in these nanocrystalline thin films on both sides of the stoichiometric composition. Mapping of the cation distribution utilizing energy-filtered transmission electron microscopy corroborates defect accommodation within the BaTiO3 grains. While the cation off-stoichiometry in thermodynamic equilibrium is negligible for BaTiO3, the metastable extended solubility range in the thin films can be directly correlated to the low annealing temperature and nanocrystalline nature. The leakage current behavior can be explained by the formation of Schottky defects for nonstoichiometric films, and the cation ratio has a distinct impact on the dielectric properties: while excess-BaO has a marginal detrimental effect on the permittivity, the dielectric constant declines rapidly by more than 50% towards the Ti-rich side. The present findings highlight the importance of compositional control for the synthesis of nanocrystalline BaTiO3 thin films, in particular for low annealing and/or deposition temperatures. Our synthesis approach using alternating layers of Ba(OH)2 and TiO2 provides a route to precisely control the cation stoichiometry.

摘要

厚度约为 50nm 的薄膜,钡钛比从 0.8 到 1.06,是通过交替沉积 Ba(OH)2 和 TiO2 层来制备的。在 750°C 下退火促进了固-固相变,生成了多晶 BaTiO3 薄膜,其中包含钙钛矿和六方相的混合物,平均晶粒尺寸小于 14nm,没有杂质相。这与富钡薄膜的立方晶格参数的增加一起表明,在这些纳米晶薄膜的两侧,在化学计量组成的两侧,钙钛矿相的亚稳溶解度范围扩大。利用能量过滤透射电子显微镜对阳离子分布进行映射,证实了在 BaTiO3 晶粒内的缺陷容纳。虽然在热力学平衡中,阳离子的化学计量比对于 BaTiO3 来说可以忽略不计,但在薄膜中,亚稳的扩展溶解度范围可以直接与低温退火和纳米晶性质相关联。漏电流行为可以用非化学计量比的薄膜形成肖特基缺陷来解释,阳离子比也对介电性能有明显的影响:尽管过量的 BaO 对介电常数的影响微不足道,但在富钛侧,介电常数迅速下降超过 50%。本研究结果强调了在纳米晶 BaTiO3 薄膜合成中,特别是在低温退火和/或沉积温度下,组成控制的重要性。我们使用 Ba(OH)2 和 TiO2 交替层的合成方法提供了一种精确控制阳离子化学计量比的途径。

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