Pak Jinsu, Jang Yeonsik, Byun Junghwan, Cho Kyungjune, Kim Tae-Young, Kim Jae-Keun, Choi Barbara Yuri, Shin Jiwon, Hong Yongtaek, Chung Seungjun, Lee Takhee
Department of Physics and Astronomy, and Institute of Applied Physics , Seoul National University , Seoul 08826 , Korea.
Department of Electrical and Computer Engineering , Inter-university Semiconductor Research Center (ISRC), Seoul National University , Seoul 08826 , Korea.
ACS Nano. 2018 Jul 24;12(7):7109-7116. doi: 10.1021/acsnano.8b02925. Epub 2018 Jun 29.
As two-dimensional (2D) transition metal dichalcogenides electronic devices are scaled down to the sub-micrometer regime, the active layers of these materials are exposed to high lateral electric fields, resulting in electrical breakdown. In this regard, understanding the intrinsic nature in layer-stacked 2D semiconducting materials under high lateral electric fields is necessary for the reliable applications of their field-effect transistors. Here, we explore the electrical breakdown phenomena originating from avalanche multiplication in MoS field-effect transistors with different layer thicknesses and channel lengths. Modulating the band structure and bandgap energy in MoS allows the avalanche multiplication to be controlled by adjusting the number of stacking layers. This phenomenon could be observed in transition metal dichalcogenide semiconducting systems due to its quantum confinement effect on the band structure. The relationship between the critical electric field for avalanche breakdown and bandgap energy is well fitted to a power law curve in both monolayer and multilayer MoS.
随着二维（2D）过渡金属二硫属化物电子器件缩小至亚微米尺度，这些材料的有源层会暴露于高横向电场中，从而导致电击穿。在这方面，了解层状堆叠二维半导体材料在高横向电场下的本征特性对于其场效应晶体管的可靠应用至关重要。在此，我们探究了不同层厚和沟道长度的MoS场效应晶体管中源自雪崩倍增的电击穿现象。调制MoS中的能带结构和带隙能量可通过调整堆叠层数来控制雪崩倍增。由于其对能带结构的量子限制效应，这种现象可在过渡金属二硫属化物半导体系统中观察到。在单层和多层MoS中，雪崩击穿的临界电场与带隙能量之间的关系都能很好地拟合为幂律曲线。
