Zhang An, He Rong, Li Huiping, Chen Yijun, Kong Taoyi, Li Kan, Ju Huanxin, Zhu Junfa, Zhu Wenguang, Zeng Jie
Hefei National Laboratory for Physical Sciences at the Microscale, Key Laboratory of Strongly-Coupled Quantum Matter Physics of Chinese Academy of Sciences, National Synchrotron Radiation Laboratory, Department of Chemical Physics, Department of Physics, University of Science and Technology of China, Hefei, Anhui, 230026, P. R. China.
Angew Chem Int Ed Engl. 2018 Aug 20;57(34):10954-10958. doi: 10.1002/anie.201806043. Epub 2018 Aug 7.
Engineering electronic properties by elemental doping is a direct strategy to design efficient catalysts towards CO electroreduction. Atomically thin SnS nanosheets were modified by Ni doping for efficient electroreduction of CO . The introduction of Ni into SnS nanosheets significantly enhanced the current density and Faradaic efficiency for carbonaceous product relative to pristine SnS nanosheets. When the Ni content was 5 atm %, the Ni-doped SnS nanosheets achieved a remarkable Faradaic efficiency of 93 % for carbonaceous product with a current density of 19.6 mA cm at -0.9 V vs. RHE. A mechanistic study revealed that the Ni doping gave rise to a defect level and lowered the work function of SnS nanosheets, resulting in the promoted CO activation and thus improved performance in CO electroreduction.
通过元素掺杂来调控电子性质是设计高效的CO电还原催化剂的直接策略。通过Ni掺杂对原子级厚度的SnS纳米片进行改性，以实现高效的CO电还原。相对于原始的SnS纳米片，将Ni引入SnS纳米片中显著提高了电流密度以及含碳产物的法拉第效率。当Ni含量为5 atm %时，Ni掺杂的SnS纳米片在相对于可逆氢电极（RHE）为-0.9 V的电位下，对于含碳产物实现了93 %的显著法拉第效率，电流密度为19.6 mA cm 。机理研究表明，Ni掺杂产生了一个缺陷能级并降低了SnS纳米片的功函数，从而促进了CO的活化，进而提高了CO电还原性能。
