Han Gang Hee, Duong Dinh Loc, Keum Dong Hoon, Yun Seok Joon, Lee Young Hee
Center for Integrated Nanostructure Physics (CINAP) , Institute for Basic Science (IBS) , Suwon 16419 , Republic of Korea.
Department of Energy Science , Sungkyunkwan University , Suwon 16419 , Republic of Korea.
Chem Rev. 2018 Jul 11;118(13):6297-6336. doi: 10.1021/acs.chemrev.7b00618. Epub 2018 Jun 29.
Transition metal dichalcogenides are layered materials which are composed of transition metals and chalcogens of the group VIA in a 1:2 ratio. These layered materials have been extensively investigated over synthesis and optical and electrical properties for several decades. It can be insulators, semiconductors, or metals revealing all types of condensed matter properties from a magnetic lattice distorted to superconducting characteristics. Some of these also feature the topological manner. Instead of covering the semiconducting properties of transition metal dichalcogenides, which have been extensively revisited and reviewed elsewhere, here we present the structures of metallic transition metal dichalcogenides and their synthetic approaches for not only high-quality wafer-scale samples using conventional methods (e.g., chemical vapor transport, chemical vapor deposition) but also local small areas by a modification of the materials using Li intercalation, electron beam irradiation, light illumination, pressures, and strains. Some representative band structures of metallic transition metal dichalcogenides and their strong layer-dependence are reviewed and updated, both in theoretical calculations and experiments. In addition, we discuss the physical properties of metallic transition metal dichalcogenides such as periodic lattice distortion, magnetoresistance, superconductivity, topological insulator, and Weyl semimetal. Approaches to overcome current challenges related to these materials are also proposed.
过渡金属二硫属化物是一类层状材料，由过渡金属和第VIA族硫属元素按1:2的比例组成。几十年来，人们对这些层状材料的合成、光学和电学性质进行了广泛研究。它们可以是绝缘体、半导体或金属，展现出从扭曲的磁晶格到超导特性等各种凝聚态性质。其中一些还具有拓扑特性。本文并非涵盖过渡金属二硫属化物的半导体性质（这在其他地方已有广泛的重新审视和综述），而是介绍金属性过渡金属二硫属化物的结构及其合成方法，这些方法不仅包括使用传统方法（如化学气相传输、化学气相沉积）制备高质量的晶圆级样品，还包括通过锂嵌入、电子束辐照、光照、压力和应变等对材料进行改性来制备局部小区域样品。本文综述并更新了金属性过渡金属二硫属化物在理论计算和实验中的一些代表性能带结构及其强烈的层依赖性。此外，我们还讨论了金属性过渡金属二硫属化物的物理性质，如周期性晶格畸变、磁电阻、超导性、拓扑绝缘体和外尔半金属。本文还提出了克服与这些材料相关的当前挑战的方法。
