Yang Hyejung, Synnatschke Kevin, Yoon Jiho, Mirhosseini Hossein, Hermes Ilka M, Li Xiaodong, Neumann Christof, Morag Ahiud, Turchanin Andrey, Kühne Thomas D, Parkin Stuart S P, Yang Sheng, Shaygan Nia Ali, Feng Xinliang
Center for Advancing Electronics Dresden (cfaed) and Faculty of Chemistry and Food Chemistry, Technische Universität Dresden, 01062 Dresden, Germany.
Max Planck Institute for Microstructure Physics, D-06120 Halle (Saale), Germany.
ACS Nano. 2025 Apr 15;19(14):14309-14317. doi: 10.1021/acsnano.5c01224. Epub 2025 Apr 2.
Tungsten ditelluride (WTe) exhibits thickness-dependent properties, including magnetoresistance, ferroelectricity, and superconductivity, positioning it as an ideal candidate for nanoelectronics and spintronics. Therefore, the scalable synthesis of WTe with defined thicknesses down to the monolayer limit is crucial for unlocking these properties. Here, we introduce a universal electrolyte chemistry utilizing dual-ammonium compounds to exfoliate WTe, enabling precise control over the intercalation stages and flake thicknesses. This approach achieves an 86% exfoliation yield, producing high-quality flakes averaging 2.83 nm in thickness, in which approximately 10% are monolayers. A solution-processed, single-flake device (10 nm thick) exhibits a magnetoresistance (MR) of 50% at 2 K and 9 T, and piezo-response force microscopy (PFM) indicates ferroelectricity in WTe flakes. Additionally, large-area WTe thin films (15 × 15 mm), fabricated using Langmuir-Schaefer deposition, exhibit metallic behavior with a high conductivity of 2.9 × 10 S/m. Overall, the hybrid electrolyte approach facilitates the scalable synthesis of high-quality, solution-processable, two-dimensional (2D) WTe flakes with excellent properties. This versatility of the developed method has been further exemplified through the exfoliation of other transition metal dichalcogenides (e.g., MoS and MoSe), expanding the potential for the extensive application of exfoliated 2D materials in printable and flexible nanoelectronics.
二碲化钨(WTe)展现出与厚度相关的特性,包括磁阻、铁电性和超导性,使其成为纳米电子学和自旋电子学的理想候选材料。因此,可扩展合成厚度确定直至单层极限的WTe对于揭示这些特性至关重要。在此,我们引入一种利用双铵化合物剥落WTe的通用电解质化学方法,能够精确控制插层阶段和薄片厚度。这种方法实现了86%的剥落产率,产生平均厚度为2.83 nm的高质量薄片,其中约10%为单层。一种溶液处理的单薄片器件(10 nm厚)在2 K和9 T时表现出50%的磁阻(MR),并且压电响应力显微镜(PFM)表明WTe薄片具有铁电性。此外,使用朗缪尔 - 施瓦茨沉积法制备的大面积WTe薄膜(15×15 mm)表现出金属行为,具有2.9×10 S/m的高电导率。总体而言,混合电解质方法有助于可扩展合成具有优异性能的高质量、可溶液处理的二维(2D)WTe薄片。通过剥落其他过渡金属二卤化物(例如MoS和MoSe)进一步例证了所开发方法的这种通用性,扩大了剥落的二维材料在可印刷和柔性纳米电子学中广泛应用的潜力。