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超越胶体半导体纳米晶体的带隙光致发光

Beyond the Bandgap Photoluminescence of Colloidal Semiconductor Nanocrystals.

作者信息

Bera Rajesh, Kim Gahyeon, Choi Dongsun, Kim Jihye, Jeong Kwang Seob

机构信息

Department of Chemistry, Korea University, Seoul 02841, Republic of Korea.

Center for Molecular Spectroscopy and Dynamics, Institute for Basic Science (IBS), Korea University, Seoul 02841, Republic of Korea.

出版信息

J Phys Chem Lett. 2021 Mar 18;12(10):2562-2569. doi: 10.1021/acs.jpclett.1c00142. Epub 2021 Mar 8.

Abstract

Intraband transitions of colloidal semiconductor nanocrystals, or the electronic transitions occurring in either the conduction band or valence band, have recently received considerable attention because utilizing the intraband transitions provides new approaches for applications such as photodetectors, imaging, solar cells, lasers, and so on. In the past few years, it has been revealed that observing the intraband transition is not limited for temporal measurement such as ultrafast spectroscopy but available for steady-state measurement even under ambient conditions with the help of self-doped semiconductor nanocrystals. Considering the large absorption coefficient of the steady-state intraband transition comparable to that of the bandgap transition, the use of the intraband transition will be promising for both fundamental and application studies. Here, we summarize the recent progress in studies on intraband photoluminescence of self-doped semiconductor nanocrystals and discuss key questions to be addressed in future research.

摘要

胶体半导体纳米晶体的带内跃迁,即发生在导带或价带中的电子跃迁,最近受到了广泛关注,因为利用带内跃迁为光电探测器、成像、太阳能电池、激光器等应用提供了新方法。在过去几年中,人们发现观察带内跃迁不仅限于超快光谱等时间分辨测量,在自掺杂半导体纳米晶体的帮助下,即使在环境条件下也可用于稳态测量。考虑到稳态带内跃迁的吸收系数与带隙跃迁的吸收系数相当,带内跃迁在基础研究和应用研究中都将具有广阔前景。在此,我们总结了自掺杂半导体纳米晶体带内光致发光研究的最新进展,并讨论了未来研究中需要解决的关键问题。

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