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反位相打印半干态乙酰丙酮金属层及其在溶液加工 IGZO TFT 制作中的应用。

Reverse Offset Printing of Semidried Metal Acetylacetonate Layers and Its Application to a Solution-Processed IGZO TFT Fabrication.

机构信息

Flexible Electronics Research Center , National Institute of Advanced Industrial Science and Technology (AIST) , Tsukuba Central 5, 1-1-1 Higashi , Tsukuba , Ibaraki 305-8565 , Japan.

VTT Technical Research Centre of Finland Ltd. , Tietotie 3 , Espoo FI-02150 , Finland.

出版信息

ACS Appl Mater Interfaces. 2018 Jul 25;10(29):24339-24343. doi: 10.1021/acsami.8b07465. Epub 2018 Jul 10.

DOI:10.1021/acsami.8b07465
PMID:29972298
Abstract

The submicrometer resolution printing of various metal acetylacetonate complex inks including Fe, V, Mn, Co, Ni, Zn, Zr, Mo, and In was enabled by a robust ink formulation scheme which adopted a ternary solvent system where solubility, surface wettability, and drying as well as absorption behavior on a polydimethylsiloxane sheet were optimized. Hydrogen plasma in heated conditions resulted in bombarded, resistive, or conductive state depending on the temperature and the metal species. With a conductivity-bestowed layer of MoO and a plasma-protecting layer of ZrO situated on the top of an IGZO layer, a solution-processed TFT exhibiting an average mobility of 0.17 cm/(V s) is demonstrated.

摘要

各种金属乙酰丙酮配合物油墨(包括 Fe、V、Mn、Co、Ni、Zn、Zr、Mo 和 In)的亚微米分辨率印刷可通过一种稳健的油墨配方方案实现,该方案采用了三元溶剂系统,其中溶解度、表面润湿性以及在聚二甲基硅氧烷片上的干燥和吸收行为得到了优化。在加热条件下的氢气等离子体根据温度和金属种类而呈现出被轰击、电阻或导电状态。在 IGZO 层顶部设置一层赋予导电性的 MoO 和一层等离子体保护的 ZrO ,展示了一种溶液处理 TFT,其平均迁移率为 0.17 cm/(V s)。

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