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基于垂直铟镓锌氧化物沟道的柔性双电层薄膜晶体管。

Flexible electric-double-layer thin film transistors based on a vertical InGaZnO channel.

作者信息

Lei Liuhui, Tan Yuanyuan, Yuan Xing, Dou Wei, Zhang Jiale, Wang Yongkang, Zeng Sizhe, Deng Shenyi, Guo Haoting, Zhou Weichang, Tang Dongsheng

机构信息

School of Physics and Electronics, Key Laboratory of Low Dimensional Quantum Structures and Quantum Control, Key Laboratory for Matter Microstructure and Function of Hunan Province, Synergetic Innovation Centre for Quantum Effects and Application, Hunan Normal University Changsha 410081 People's Republic of China

Hunan First Normal University Changsha 410205 People's Republic of China.

出版信息

RSC Adv. 2021 May 18;11(29):17910-17913. doi: 10.1039/d1ra02155a. eCollection 2021 May 13.

DOI:10.1039/d1ra02155a
PMID:35480189
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9033188/
Abstract

Flexible electric-double-layer (EDL) thin film transistors (TFTs) based on a vertical InGaZnO (IGZO) channel are fabricated at room temperature. Such TFTs show a low operation voltage of 1.0 V due to the large specific gate capacitance of 3.8 μF cm related to electric-double-layer formation. The threshold voltage, drain current on/off ratio and subthreshold swing are estimated to be -0.1 V, 1.2 × 10 and 80 mV per decade, respectively. The combination of low voltage, high current on-to-off ratio and room temperature processing make the flexible vertical-IGZO-channel TFTs very promising for low-power portable flexible electronics applications.

摘要

基于垂直铟镓锌氧化物（IGZO）沟道的柔性双电层（EDL）薄膜晶体管（TFT）在室温下制备而成。由于与双电层形成相关的3.8 μF/cm的大比栅电容，此类TFT显示出1.0 V的低工作电压。阈值电压、漏极电流开/关比和亚阈值摆幅估计分别为-0.1 V、1.2×10以及每十倍频程80 mV。低电压、高电流开/关比以及室温处理的结合使得柔性垂直IGZO沟道TFT在低功耗便携式柔性电子应用方面非常有前景。

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本文引用的文献

1
Flexible and stretchable metal oxide nanofiber networks for multimodal and monolithically integrated wearable electronics.用于多模态和整体集成可穿戴电子设备的柔性和可拉伸金属氧化物纳米纤维网络。
Nat Commun. 2020 May 15;11(1):2405. doi: 10.1038/s41467-020-16268-8.
2
Amorphous IGZO TFT with High Mobility of ∼70 cm/(V s) via Vertical Dimension Control Using PEALD.采用原子层沉积垂直维度控制的高迁移率 ∼70 cm/(V s)非晶 IGZO TFT
ACS Appl Mater Interfaces. 2019 Oct 30;11(43):40300-40309. doi: 10.1021/acsami.9b14310. Epub 2019 Oct 17.
3
Reverse Offset Printing of Semidried Metal Acetylacetonate Layers and Its Application to a Solution-Processed IGZO TFT Fabrication.
反位相打印半干态乙酰丙酮金属层及其在溶液加工 IGZO TFT 制作中的应用。
ACS Appl Mater Interfaces. 2018 Jul 25;10(29):24339-24343. doi: 10.1021/acsami.8b07465. Epub 2018 Jul 10.
4
Carbohydrate-Assisted Combustion Synthesis To Realize High-Performance Oxide Transistors.碳水化合物辅助燃烧合成实现高性能氧化物晶体管。
J Am Chem Soc. 2016 Jun 8;138(22):7067-74. doi: 10.1021/jacs.6b02309. Epub 2016 May 24.
5
Printable ion-gel gate dielectrics for low-voltage polymer thin-film transistors on plastic.用于塑料上低压聚合物薄膜晶体管的可印刷离子凝胶栅极电介质。
Nat Mater. 2008 Nov;7(11):900-6. doi: 10.1038/nmat2291. Epub 2008 Oct 19.
6
Proton diffusion mechanism in amorphous SiO2.非晶态二氧化硅中的质子扩散机制
Phys Rev Lett. 2006 Oct 13;97(15):155901. doi: 10.1103/PhysRevLett.97.155901.