基于垂直铟镓锌氧化物沟道的柔性双电层薄膜晶体管。

Flexible electric-double-layer thin film transistors based on a vertical InGaZnO channel.

作者信息

Lei Liuhui, Tan Yuanyuan, Yuan Xing, Dou Wei, Zhang Jiale, Wang Yongkang, Zeng Sizhe, Deng Shenyi, Guo Haoting, Zhou Weichang, Tang Dongsheng

机构信息

School of Physics and Electronics, Key Laboratory of Low Dimensional Quantum Structures and Quantum Control, Key Laboratory for Matter Microstructure and Function of Hunan Province, Synergetic Innovation Centre for Quantum Effects and Application, Hunan Normal University Changsha 410081 People's Republic of China

Hunan First Normal University Changsha 410205 People's Republic of China.

出版信息

RSC Adv. 2021 May 18;11(29):17910-17913. doi: 10.1039/d1ra02155a. eCollection 2021 May 13.

DOI:10.1039/d1ra02155a

PMID:35480189

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9033188/

Abstract

Flexible electric-double-layer (EDL) thin film transistors (TFTs) based on a vertical InGaZnO (IGZO) channel are fabricated at room temperature. Such TFTs show a low operation voltage of 1.0 V due to the large specific gate capacitance of 3.8 μF cm related to electric-double-layer formation. The threshold voltage, drain current on/off ratio and subthreshold swing are estimated to be -0.1 V, 1.2 × 10 and 80 mV per decade, respectively. The combination of low voltage, high current on-to-off ratio and room temperature processing make the flexible vertical-IGZO-channel TFTs very promising for low-power portable flexible electronics applications.

摘要

基于垂直铟镓锌氧化物（IGZO）沟道的柔性双电层（EDL）薄膜晶体管（TFT）在室温下制备而成。由于与双电层形成相关的3.8 μF/cm的大比栅电容，此类TFT显示出1.0 V的低工作电压。阈值电压、漏极电流开/关比和亚阈值摆幅估计分别为-0.1 V、1.2×10以及每十倍频程80 mV。低电压、高电流开/关比以及室温处理的结合使得柔性垂直IGZO沟道TFT在低功耗便携式柔性电子应用方面非常有前景。