Institute of Micro- and Nanotechnologies MacroNano®, Technische Universität Ilmenau, 98693 Ilmenau, Germany.
RF and Microwave Research Laboratory, Technische Universität Ilmenau, 98693 Ilmenau, Germany.
Sensors (Basel). 2018 Jul 4;18(7):2159. doi: 10.3390/s18072159.
The importance of micro-electromechanical systems (MEMS) for radio-frequency (RF) applications is rapidly growing. In RF mobile-communication systems, MEMS-based circuits enable a compact implementation, low power consumption and high RF performance, e.g., bulk-acoustic wave filters with low insertion loss and low noise or fast and reliable MEMS switches. However, the cross-hierarchical modelling of micro-electronic and micro-electromechanical constituents together in one multi-physical design process is still not as established as the design of integrated micro-electronic circuits, such as operational amplifiers. To close the gap between micro-electronics and micro-electromechanics, this paper presents an analytical approach towards the linear top-down design of MEMS resonators, based on their electrical specification, by the solution of the mechanical wave equation. In view of the central importance of thermal effects for the performance and stability of MEMS-based RF circuits, the temperature dependence was included in the model; the aim was to study the variations of the RF parameters of the resonators and to enable a temperature dependent MEMS oscillator simulation. The variations of the resonator parameters with respect to the ambient temperature were then verified by RF measurements in a vacuum chamber at temperatures between −35 ∘C and 85 ∘C. The systematic body of data revealed temperature coefficients of the resonant frequency between −26 ppm/K and −20 ppm/K, which are in good agreement with other data from the literature. Based on the MEMS resonator model derived, a MEMS oscillator was designed, simulated, and measured in a vacuum chamber yielding a measured temperature coefficient of the oscillation frequency of −26.3 ppm/K. The difference of the temperature coefficients of frequency of oscillator and resonator turned out to be mainly influenced by the limited -factor of the MEMS device. In both studies, the analytical model and the measurement showed very good agreement in terms of temperature dependence and the prediction of fabrication results of the resonators designed. This analytical modelling approach serves therefore as an important step towards the design and simulation of micro-electronics and micro-electromechanics in one uniform design process. Furthermore, temperature dependences of MEMS oscillators can now be studied by simulations instead of time-consuming and complex measurements.
微机电系统(MEMS)在射频(RF)应用中的重要性正在迅速增长。在 RF 移动通信系统中,基于 MEMS 的电路能够实现紧凑的实现、低功耗和高 RF 性能,例如具有低插入损耗和低噪声的体声波滤波器或快速可靠的 MEMS 开关。然而,将微电子学和微机电学的跨层次建模在一个多物理设计过程中结合在一起,仍然不如集成电路设计(例如运算放大器)那样成熟。为了缩小微电子学和微机电学之间的差距,本文提出了一种基于机械波方程的 MEMS 谐振器线性自上而下设计的分析方法,该方法基于其电气规范。鉴于热效应对基于 MEMS 的 RF 电路的性能和稳定性的重要性,该模型包括温度依赖性;目的是研究谐振器的 RF 参数变化,并实现温度相关的 MEMS 振荡器仿真。然后,通过在 −35 ∘C 和 85 ∘C 之间的真空中的 RF 测量,验证了谐振器参数随环境温度的变化。系统的数据集揭示了谐振频率的温度系数在 −26 ppm/K 和 −20 ppm/K 之间,这与文献中的其他数据非常吻合。基于导出的 MEMS 谐振器模型,设计、模拟和测量了一个 MEMS 振荡器,在真空中测量得到的振荡频率的温度系数为 −26.3 ppm/K。振荡器和谐振器的频率温度系数之间的差异主要受 MEMS 器件的有限 − 因数的影响。在这两项研究中,分析模型和测量结果在温度依赖性和设计的谐振器制造结果的预测方面都非常吻合。因此,这种分析建模方法是朝着在一个统一的设计过程中设计和模拟微电子学和微机电学迈出的重要一步。此外,现在可以通过模拟而不是耗时且复杂的测量来研究 MEMS 振荡器的温度依赖性。