Tu Cheng, Lee Joshua E-Y, Zhang Xiao-Sheng
School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.
Department of Electrical Engineering, City University of Hong Kong, Kowloon, Hong Kong.
Sensors (Basel). 2020 Sep 2;20(17):4978. doi: 10.3390/s20174978.
Over the last two decades, piezoelectric resonant sensors based on micro-electromechanical systems (MEMS) technologies have been extensively studied as such sensors offer several unique benefits, such as small form factor, high sensitivity, low noise performance and fabrication compatibility with mainstream integrated circuit technologies. One key challenge for piezoelectric MEMS resonant sensors is enhancing their quality factors () to improve the resolution of these resonant sensors. Apart from sensing applications, large values of are also demanded when using piezoelectric MEMS resonators to build high-frequency oscillators and radio frequency (RF) filters due to the fact that high-Q MEMS resonators favor lowering close-to-carrier phase noise in oscillators and sharpening roll-off characteristics in RF filters. Pursuant to boosting , it is essential to elucidate the dominant dissipation mechanisms that set the of the resonator. Based upon these insights on dissipation, Q-enhancement strategies can then be designed to target and suppress the identified dominant losses. This paper provides a comprehensive review of the substantial progress that has been made during the last two decades for dissipation analysis methods and Q-enhancement strategies of piezoelectric MEMS laterally vibrating resonators.
在过去二十年中，基于微机电系统（MEMS）技术的压电谐振传感器得到了广泛研究，因为此类传感器具有多种独特优势，如外形小巧、灵敏度高、噪声性能低以及与主流集成电路技术的制造兼容性。压电MEMS谐振传感器面临的一个关键挑战是提高其品质因数（ ），以提高这些谐振传感器的分辨率。除了传感应用外，当使用压电MEMS谐振器构建高频振荡器和射频（RF）滤波器时，也需要高值的 ，因为高Q值的MEMS谐振器有利于降低振荡器中接近载波的相位噪声，并锐化RF滤波器的滚降特性。为了提高 ，必须阐明决定谐振器 的主要耗散机制。基于这些关于耗散的见解，然后可以设计Q增强策略来针对并抑制已识别的主要损耗。本文全面回顾了过去二十年来在压电MEMS横向振动谐振器的耗散分析方法和Q增强策略方面取得的重大进展。
