Department of Electrical Engineering, National Sun Yat-sen University, Kaohsiung 80424, Taiwan.
Sensors (Basel). 2018 Jul 5;18(7):2165. doi: 10.3390/s18072165.
A high-precision Complementary Metal-Oxide-Semiconductor (CMOS) temperature sensor for (−5 °C, 120 °C) temperature range is designed and analyzed in this investigation. The proposed design is featured with a temperature range selection circuit so that the thermistor linear circuit automatically switches to a corresponding calibration loop in light of the temperature range besides the analysis of the calibration method. It resolves the problem that the temperature range of a single thermistor temperature sensor is too small. Notably, the output of the proposed design also attains a high linearity. The measurement results in a thermal chamber justifying that the output voltage is 1.96 V to 4.15 V, the maximum linearity error ≤1.4%, and the worst temperature error ≤1.1 °C in the temperature range of −5 °C to 120 °C.
本研究设计并分析了一种用于（-5°C，120°C）温度范围的高精度互补金属氧化物半导体（CMOS）温度传感器。该设计的特点是具有温度范围选择电路，使得热敏电阻线性电路根据温度范围自动切换到相应的校准环，同时分析了校准方法。它解决了单个热敏电阻温度传感器的温度范围太小的问题。值得注意的是，该设计的输出也实现了高度的线性。在热室中的测量结果表明，在-5°C 到 120°C 的温度范围内，输出电压为 1.96V 到 4.15V，最大线性误差≤1.4%，最坏温度误差≤1.1°C。
