• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利:CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验

掺杂和还原氧化铈的弹弛豫和机电性能。

Anelastic and Electromechanical Properties of Doped and Reduced Ceria.

机构信息

Department of Materials and Interfaces, Weizmann Institute of Science, Rehovot, Israel.

Department of Materials Science and Chemical Engineering, Stony Brook University, NY, USA.

出版信息

Adv Mater. 2018 Oct;30(41):e1707455. doi: 10.1002/adma.201707455. Epub 2018 Jul 8.

DOI:10.1002/adma.201707455
PMID:29984445
Abstract

Room-temperature mechanical properties of thin films and ceramics of doped and undoped ceria are reviewed with an emphasis on the anelastic behavior of the material. Notably, the unrelaxed Young's modulus of Gd-doped ceria ceramics measured by ultrasonic pulse-echo techniques is >200 GPa, while the relaxed biaxial modulus, calculated from the stress/strain ratio of thin films, is ≈10 times smaller. Oxygen-deficient ceria exhibits a number of anelastic effects, such as hysteresis of the lattice parameter, strain-dependent Poisson's ratio, room-temperature creep, and nonclassical electrostriction. Methods of measuring these properties are discussed, as well as the applicability of Raman spectroscopy for evaluating strain in thin films of Gd-doped ceria. Special attention is paid to detection of the time dependence of anelastic effects. Both the practical advantages and disadvantages of anelasticity on the design and stability of microscopic devices dependent on ceria thin films are discussed, and methods of mitigating the latter are suggested, with the aim of providing a cautionary note for materials scientists and engineers designing devices containing thin films or bulk ceria, as well as providing data-based constraints for theoreticians who are involved in modeling of the unusual electrical and electromechanical properties of undoped and doped ceria.

摘要

掺杂和未掺杂氧化铈薄膜和陶瓷的室温力学性能综述,重点介绍材料的滞弹性行为。值得注意的是,通过超声脉冲回波技术测量的 Gd 掺杂氧化铈陶瓷的未弛豫杨氏模量>200GPa,而通过薄膜应力/应变比计算的松弛双轴模量则小约 10 倍。缺氧氧化铈表现出多种滞弹性效应,例如晶格参数滞后、应变相关泊松比、室温蠕变和非经典电致伸缩。讨论了测量这些性能的方法,以及拉曼光谱在评估 Gd 掺杂氧化铈薄膜应变中的适用性。特别关注对滞弹性效应时间依赖性的检测。讨论了滞弹性对依赖氧化铈薄膜的微观器件设计和稳定性的实际优缺点,并提出了减轻后者的方法,目的是为设计含有薄膜或块状氧化铈的器件的材料科学家和工程师提供警示,并为涉及未掺杂和掺杂氧化铈异常电和机电性能建模的理论提供基于数据的约束。

相似文献

1
Anelastic and Electromechanical Properties of Doped and Reduced Ceria.掺杂和还原氧化铈的弹弛豫和机电性能。
Adv Mater. 2018 Oct;30(41):e1707455. doi: 10.1002/adma.201707455. Epub 2018 Jul 8.
2
Trivalent Dopant Size Influences Electrostrictive Strain in Ceria Solid Solutions.三价掺杂剂尺寸对二氧化铈固溶体中电致伸缩应变的影响。
ACS Appl Mater Interfaces. 2021 May 5;13(17):20269-20276. doi: 10.1021/acsami.0c20810. Epub 2021 Apr 22.
3
Dopant Concentration Controls Quasi-Static Electrostrictive Strain Response of Ceria Ceramics.掺杂剂浓度控制二氧化铈陶瓷的准静态电致伸缩应变响应。
ACS Appl Mater Interfaces. 2020 Sep 2;12(35):39381-39387. doi: 10.1021/acsami.0c07799. Epub 2020 Aug 20.
4
Modeling Strain Distribution at the Atomic Level in Doped Ceria Films with Extended X-ray Absorption Fine Structure Spectroscopy.利用扩展X射线吸收精细结构光谱法对掺杂二氧化铈薄膜中原子水平的应变分布进行建模。
Inorg Chem. 2019 Jun 3;58(11):7527-7536. doi: 10.1021/acs.inorgchem.9b00730. Epub 2019 May 15.
5
The elastic component of anisotropic strain dominates the observed shift in the F Raman mode of anelastic ceria thin films.各向异性应变的弹性分量主导了非弹性二氧化铈薄膜的F拉曼模式中观察到的频移。
Phys Chem Chem Phys. 2023 Nov 15;25(44):30563-30571. doi: 10.1039/d3cp03878e.
6
Anisotropic Strain in Rare-Earth Substituted Ceria Thin Films Probed by Polarized Raman Spectroscopy and First-Principles Calculations.通过偏振拉曼光谱和第一性原理计算探测稀土取代二氧化铈薄膜中的各向异性应变
ACS Appl Mater Interfaces. 2020 Dec 16;12(50):56251-56259. doi: 10.1021/acsami.0c14249. Epub 2020 Dec 3.
7
Enhanced Mechanical and Electromechanical Properties of Compositionally Complex Zirconia Zr(GdPrNdSmY)O Ceramics.成分复杂的氧化锆Zr(GdPrNdSmY)O陶瓷的增强力学和机电性能
ACS Appl Mater Interfaces. 2024 Mar 13;16(10):12765-12772. doi: 10.1021/acsami.3c17501. Epub 2024 Mar 1.
8
Mechanical, thermal, and electrochemical properties of Pr doped ceria from wafer curvature measurements.掺镨氧化铈的机械、热和电化学性能:从晶圆曲率测量。
Phys Chem Chem Phys. 2018 Nov 7;20(43):27350-27360. doi: 10.1039/c8cp04802a.
9
Electromechanically active pair dynamics in a Gd-doped ceria single crystal.钆掺杂二氧化铈单晶中的机电活性对动力学
Phys Chem Chem Phys. 2021 May 19;23(19):11233-11239. doi: 10.1039/d1cp00748c.
10
Giant electrostriction in Gd-doped ceria.掺钆氧化铈中的巨电致伸缩。
Adv Mater. 2012 Nov 14;24(43):5857-61. doi: 10.1002/adma.201202270. Epub 2012 Aug 30.

引用本文的文献

1
Enhanced non-classical electrostriction in strained tetragonal ceria.应变四方二氧化铈中增强的非经典电致伸缩效应
Nat Commun. 2025 Jan 2;16(1):36. doi: 10.1038/s41467-024-55393-6.
2
Oxygen-defective electrostrictors for soft electromechanics.用于软机电的缺氧电致伸缩器。
Sci Adv. 2024 Aug 30;10(35):eadq3444. doi: 10.1126/sciadv.adq3444.