Dept. Materials and Interfaces, Weizmann Institute of Science, Rehovot 76100, Israel.
Adv Mater. 2012 Nov 14;24(43):5857-61. doi: 10.1002/adma.201202270. Epub 2012 Aug 30.
Gd-doped CeO(2) exhibits an anomalously large electrostriction effect generating stress that can reach 500 MPa. In situ XANES measurements indicate that the stress develops in response to the rearrangement of cerium-oxygen vacancy pairs. This mechanism is fundamentally different from that of materials currently in use and suggests that Gd-doped ceria is a representative of a new family of high-performance electromechanical materials.
掺钆氧化铈表现出异常大的电致伸缩效应，产生的应力可达 500 MPa。原位 XANES 测量表明，这种应力的产生是由于铈-氧空位对的重新排列。这种机制与目前使用的材料完全不同，表明掺钆氧化铈是一类新型高性能机电材料的代表。
