Wang Xuan, Lu Bin, Li Ling, Qiu Hengshan
Laboratory of Environmental Science and Technology Xinjiang Technical Institute of Physics & Chemistry Key Laboratory of Functional Materials and Devices for Special Environments Chinese Academy of Sciences Urumqi 830011 P. R. China.
University of Chinese Academy of Sciences Beijing 100049 P. R. China.
ChemistryOpen. 2018 Jun 19;7(7):491-494. doi: 10.1002/open.201800044. eCollection 2018 Jul.
Exploring the interactions of oxygen with defective oxide is of importance to understand the microscopic process and performance of ZnO-based oxygen sensors. The interactions of environmental oxygen with vacuum-annealed defective ZnO have been studied by electrical methods, vacuum Fourier transform infrared spectroscopy, and in situ adsorption experiments. It was found that the vacuum-annealed defective ZnO exhibits varied electrical response at different temperatures, which, by vacuum IR investigation, was ascribed to the subtle balance between formation of oxygen vacancies and their interactions with environmental oxygen. Further studies showed that two microscopic steps including surface adsorption and bulk diffusion were dominating the interactions between defective ZnO and environmental oxygen, and the corresponding apparent activation energies were estimated to be 0.093 and 0.67 eV through in situ adsorption experiments. The quite low activation barrier of oxygen adsorption on the defective ZnO was proposed to be responsible for the extreme high sensitivity of ZnO-based oxygen sensors.
探索氧与缺陷氧化物的相互作用对于理解基于ZnO的氧传感器的微观过程和性能至关重要。通过电学方法、真空傅里叶变换红外光谱和原位吸附实验研究了环境氧与真空退火的缺陷ZnO的相互作用。发现真空退火的缺陷ZnO在不同温度下表现出不同的电响应,通过真空红外研究,这归因于氧空位形成与其与环境氧相互作用之间的微妙平衡。进一步的研究表明,包括表面吸附和体扩散在内的两个微观步骤主导了缺陷ZnO与环境氧之间的相互作用,并且通过原位吸附实验估计相应的表观活化能分别为0.093和0.67 eV。有人提出,缺陷ZnO上氧吸附的极低活化能是基于ZnO的氧传感器极高灵敏度的原因。