School of Advanced Materials Science & Engineering , Sungkyunkwan University , Suwon 16419 , Korea.
Department of Materials Science and Engineering , University of Texas at Dallas , Richardson , Texas 75080 , United States.
ACS Appl Mater Interfaces. 2018 Aug 8;10(31):26378-26386. doi: 10.1021/acsami.8b07066. Epub 2018 Jul 24.
In the post-Moore era, it is well-known that contact resistance has been a critical issue in determining the performance of complementary metal-oxide-semiconductor (CMOS) reaching physical limits. Conventional Ohmic contact techniques, however, have hindered rather than helped the development of CMOS technology reaching its limits of scaling. Here, a novel conductive filament metal-interlayer-semiconductor (CF-MIS) contact-which achieves ultralow contact resistance by generating CFs and lowering Schottky barrier height (SBH)-is investigated for potential applications in various nanodevices in lieu of conventional Ohmic contacts. This universal and innovative technique, CF-MIS contact, forming the CFs to provide a quantity of electron paths as well as tuning SBH of semiconductor is first introduced. The proposed CF-MIS contact achieves ultralow specific contact resistivity, exhibiting up to ∼×700 000 reduction compared to that of the conventional metal-semiconductor contact. This study proves the viability of CF-MIS contacts for future Ohmic contact schemes and that they can easily be extended to mainstream electronic nanodevices that suffer from significant contact resistance problems.
在后摩尔时代，众所周知，接触电阻一直是决定互补金属氧化物半导体（CMOS）性能的关键问题，因为其已经达到了物理极限。然而，传统的欧姆接触技术阻碍了而不是帮助了 CMOS 技术达到其缩放极限的发展。在这里，研究了一种新型的导电细丝金属-半导体-绝缘体（CF-MIS）接触，通过生成 CF 和降低肖特基势垒高度（SBH）来实现超低接触电阻，以替代传统的欧姆接触，用于各种纳米器件中的潜在应用。首先介绍了通用且创新的 CF-MIS 接触技术，通过形成 CF 来提供大量的电子路径，并调整半导体的 SBH。与传统的金属-半导体接触相比，所提出的 CF-MIS 接触实现了超低的比接触电阻率，表现出高达约×700 000 的降低。这项研究证明了 CF-MIS 接触对于未来的欧姆接触方案的可行性，并且它们可以很容易地扩展到主流的电子纳米器件，这些器件存在严重的接触电阻问题。
