School of Materials Science and Engineering , Ocean University of China , Qingdao 266100 , China.
Institute of Marine Materials Science and Engineering , Shanghai Maritime University , Shanghai 201306 , China.
ACS Appl Mater Interfaces. 2018 Aug 8;10(31):26713-26722. doi: 10.1021/acsami.8b09063. Epub 2018 Jul 24.
Intrinsic metamaterials with negative- k that originated from random-structured materials have drawn increasing attention. Currently, intrinsic negative- k was mainly achieved in percolative composites by tailoring the compositions and microstructures. Herein, plasmalike negative- k was successfully achieved in multiwalled carbon nanotubes (MWCNT)/polyimide (PI) nanocomposites via applying external dc bias which exhibited excellent capability in conveniently and accurately adjusting negative- k. Mechanism analysis indicated that the localized charges at the interfaces between MWCNT and PI became delocalized after gaining energy from the dc bias, resulting in elevated concentration of delocalized charges, and hence the enhanced negative- k. Furthermore, it is surprising to observe that negative- k also appeared in multilayer nanocomposites consisting of alternating BaTiO/PI and PI layers, in which there was no percolative conducting network. On the basis of systematic analysis, it is proposed that the unique nonpercolative negative- k resulted from the mutual competition between plasma oscillations of delocalized charges and polarizations of localized charges. Negative- k appeared once the polarizations were overwhelmed by plasma oscillations. This work demonstrated that applying dc bias is a promising way to achieve highly tailorable negative- k. Meanwhile, the observation of unique nonpercolative negative- k and the clarification of underlying mechanisms offer new insights into negative- k metamaterials, which will greatly facilitate the exploration of high-performance electromagnetic metamaterials.
具有负介电常数 k 的本征超材料源于随机结构材料,已引起越来越多的关注。目前,本征负 k 主要通过调整成分和微结构在渗流复合材料中实现。本文通过施加直流偏压,在多壁碳纳米管 (MWCNT)/聚酰亚胺 (PI) 纳米复合材料中成功实现了类等离子体负 k,具有方便、准确地调节负 k 的优异性能。机理分析表明,MWCNT 和 PI 界面处的局域电荷从直流偏压获得能量后变得离域,导致离域电荷浓度增加,从而增强了负 k。此外,令人惊讶的是,在由交替的 BaTiO/PI 和 PI 层组成的多层纳米复合材料中也观察到了负 k,其中没有渗流导电网络。基于系统分析,提出了独特的非渗流负 k 是由离域电荷的等离子体振荡和局域电荷的极化之间的相互竞争引起的。一旦极化被等离子体振荡所克服,就会出现负 k。这项工作表明,施加直流偏压是实现高度可调负 k 的一种很有前途的方法。同时,对独特的非渗流负 k 的观察和对潜在机制的澄清为负 k 超材料提供了新的见解,这将极大地促进高性能电磁超材料的探索。