Program in Applied Physics, Maejo University, Chiang Mai, 50290, Thailand.
Nanoscale. 2018 Aug 2;10(30):14579-14585. doi: 10.1039/c8nr02850h.
The modification of nitrogen configurations is a viable way to control the electronic properties of nitrogen-doped single-walled carbon nanotubes (N-doped SWCNTs). N-doped SWCNTs were synthesized by a conventional chemical vapor deposition process with a mixed carbon/nitrogen (C/N) feedstock. While higher feedstock flow rates promote the formation of encapsulated N2 molecules, lower flow rates show a predominance of pyridinic and graphitic nitrogen structures as revealed by X-ray photoemission spectroscopy. Therefore, the nitrogen doping in the sp2 carbon network can be controlled by the flow rate of the C/N feedstock.
氮构型的修饰是控制掺氮单壁碳纳米管（N-doped SWCNTs）电子性质的一种可行方法。N-doped SWCNTs 是通过传统的化学气相沉积工艺用混合碳/氮（C/N）原料合成的。虽然较高的原料流速有利于封装 N2 分子的形成，但较低的流速表明 X 射线光电子能谱显示出优先存在的吡啶型和石墨型氮结构。因此，氮在 sp2 碳网络中的掺杂可以通过 C/N 原料的流速来控制。
