Advanced Materials Department, IPICYT, Camino a la Presa San Jose 2055, Col. Lomas 4a Seccion, 78216 San Luis Potosi, SLP, Mexico.
ACS Nano. 2010 Mar 23;4(3):1696-702. doi: 10.1021/nn901599g.
Here we report the synthesis of single-walled carbon nanotube bundles by chemical vapor deposition in the presence of electron donor elements (N, P, and Si). In order to introduce each dopant into the graphitic carbon lattice, different precursors containing the doping elements (benzylamine, pyrazine, triphenylphosphine, and methoxytrimethylsilane) were added at various concentrations into ethanol/ferrocene solutions. The synthesized nanotubes and byproduct were characterized by electron microscopy and Raman spectroscopy. Our results reveal intrinsic structural and electronic differences for the N-, P-, and Si- doped nanotubes. These tubes can now be tested for the fabrication of electronic nanodevices, and their performance can be observed.
在这里，我们报告了在电子给体元素（N、P 和 Si）存在下通过化学气相沉积合成单壁碳纳米管束。为了将每种掺杂剂引入石墨碳晶格中，将含有掺杂元素的不同前体（苄胺、吡嗪、三苯基膦和甲氧三甲基硅烷）以不同浓度添加到乙醇/二茂铁溶液中。通过电子显微镜和拉曼光谱对合成的纳米管和副产物进行了表征。我们的结果揭示了 N、P 和 Si 掺杂纳米管的固有结构和电子差异。现在可以对这些管进行电子纳米器件制造的测试，并观察其性能。
