State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of, Science and Technology (HUST), Wuhan, 430074, P. R. China.
Chemistry. 2018 Oct 17;24(58):15678-15684. doi: 10.1002/chem.201803634. Epub 2018 Sep 16.
As a novel layered indium selenide (InSe) semiconductor has been attracting considerable interest in the field of modern (opto)-electronics. Despite current progress, the synthesis of ultrathin InSe nanoflakes still poses quite a challenge, due to its universal co-existing varied stoichiometric compounds. In this work, a novel phase-engineered route is proposed for synthesizing ultrathin single-crystalline InSe nanoflakes with the assistance of a stable mass-transfer process in a space-confined chemical vapor deposition (CVD) system. By finely tuning the growth parameters, InSe can be obtained through engineering a phase-transition thereby eliminating the undesirable In Se phase, revealed by the synergistic effect of high-content H and deficient Se. Furthermore, owing to the non-centrosymmetric structure, the CVD-grown InSe nanoflakes exhibit a high-performance second harmonic generation (SHG), making it very promising for future SHG applications in 2D configurations. This approach paves the way for the synthesis of other similar ultrathin materials with multiphase homologous compounds.
作为一种新型的层状硒化铟（InSe）半导体，在现代（光）电子学领域引起了相当大的兴趣。尽管目前已经取得了进展，但由于普遍存在多种化学计量比的化合物，超薄 InSe 纳米片的合成仍然是一个相当大的挑战。在这项工作中，提出了一种新的相工程路线，通过在空间受限的化学气相沉积（CVD）系统中利用稳定的传质过程，合成超薄单晶 InSe 纳米片。通过精细调整生长参数，可以通过工程相变获得 InSe，从而消除不必要的 In Se 相，这是高含量 H 和缺 Se 的协同作用的结果。此外，由于非中心对称结构，CVD 生长的 InSe 纳米片表现出高性能的二次谐波产生（SHG），非常有前途用于未来 2D 配置中的 SHG 应用。该方法为合成具有多相同位化合物的其他类似超薄材料铺平了道路。
