Gong Chuanhui, Chu Junwei, Yin Chujun, Yan Chaoyi, Hu Xiaozong, Qian Shifeng, Hu Yin, Hu Kai, Huang Jianwen, Wang Hongbo, Wang Yang, Wangyang Peihua, Lei Tianyu, Dai Liping, Wu Chunyang, Chen Bo, Li Chaobo, Liao Min, Zhai Tianyou, Xiong Jie
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China.
Institute of Microelectronics of Chinese Academy of Sciences, Beijing, 100029, P. R. China.
Adv Mater. 2019 Sep;31(36):e1903580. doi: 10.1002/adma.201903580. Epub 2019 Jul 24.
2D planar structures of nonlayered wide-bandgap semiconductors enable distinguished electronic properties, desirable short wavelength emission, and facile construction of 2D heterojunction without lattice match. However, the growth of ultrathin 2D nonlayered materials is limited by their strong covalent bonded nature. Herein, the synthesis of ultrathin 2D nonlayered CuBr nanosheets with a thickness of about 0.91 nm and an edge size of 45 µm via a controllable self-confined chemical vapor deposition method is described. The enhanced spin-triplet exciton (Z , 2.98 eV) luminescence and polarization-enhanced second-harmonic generation based on the 2D CuBr flakes demonstrate the potential of short-wavelength luminescent applications. Solar-blind and self-driven ultraviolet (UV) photodetectors based on the as-synthesized 2D CuBr flakes exhibit a high photoresponsivity of 3.17 A W , an external quantum efficiency of 1126%, and a detectivity (D*) of 1.4 × 10 Jones, accompanied by a fast rise time of 32 ms and a decay time of 48 ms. The unique nonlayered structure and novel optical properties of the 2D CuBr flakes, together with their controllable growth, make them a highly promising candidate for future applications in short-wavelength light-emitting devices, nonlinear optical devices, and UV photodetectors.
非层状宽带隙半导体的二维平面结构具有独特的电子特性、理想的短波长发射,并且能够轻松构建无需晶格匹配的二维异质结。然而,超薄二维非层状材料的生长受到其强共价键性质的限制。在此,描述了通过可控的自限域化学气相沉积法合成厚度约为0.91 nm、边缘尺寸为45 µm的超薄二维非层状溴化铜纳米片。基于二维溴化铜薄片的增强的自旋三重态激子(Z,2.98 eV)发光和偏振增强的二次谐波产生证明了其在短波长发光应用中的潜力。基于所合成的二维溴化铜薄片的日盲和自驱动紫外(UV)光电探测器表现出3.17 A W的高光响应度、1126%的外量子效率和1.4×10琼斯的探测率(D*),同时具有32 ms的快速上升时间和48 ms的衰减时间。二维溴化铜薄片独特的非层状结构和新颖的光学性质,以及其可控生长,使其成为未来在短波长发光器件、非线性光学器件和紫外光电探测器中应用的极具潜力的候选材料。