Zhang Yongheng, Shi Ying, Wu Meimei, Zhang Kun, Man Baoyuan, Liu Mei
School of Physics and Electronics, Shandong Normal University, Jinan 250014, China.
Institute of Materials and Clean Energy, Shandong Normal University, Jinan 250014, China.
Nanomaterials (Basel). 2018 Jul 10;8(7):515. doi: 10.3390/nano8070515.
As a new atomically layered, two-dimensional material, tin (IV) diselenide (SnSe₂) has attracted extensive attention due to its compelling application in electronics and optoelectronics. However, the great challenge of impurities and the preparation of high-quality ultrathin SnSe₂ nanoflakes has hindered far-reaching research and SnSe₂ practical applications so far. Therefore, a facile chemical vapor deposition (CVD) method is employed to synthesize large-scale ultrathin SnSe₂ flakes on mica substrates using SnSe and Se powder as precursors. The structural characteristics and crystalline quality of the product were investigated. Moreover, Raman characterizations indicate that the intensity of A peak and E peak, and the Raman shift of E are associated with the thickness of the SnSe₂ nanoflakes. The ultrathin SnSe₂ nanoflakes show a strong surface-enhanced Raman spectroscopy (SERS) activity for Rhodamine 6G (R6G) molecules. Theoretical explanations for the enhancement principle based on the chemical enhancement mechanism and charge transfer diagram between R6G and SnSe₂ are provided. The results demonstrate that the ultrathin SnSe₂ flakes are high-quality single crystal and can be exploited for microanalysis detection and optoelectronic application.
作为一种新型的原子层二维材料，二硒化锡（SnSe₂）因其在电子学和光电子学领域的诱人应用而备受关注。然而，杂质问题以及高质量超薄SnSe₂纳米片的制备难题，至今阻碍了深入的研究和SnSe₂的实际应用。因此，采用一种简便的化学气相沉积（CVD）方法，以SnSe和Se粉末为前驱体，在云母衬底上合成大规模超薄SnSe₂薄片。研究了产物的结构特征和晶体质量。此外，拉曼表征表明，A峰和E峰的强度以及E的拉曼位移与SnSe₂纳米片的厚度有关。超薄SnSe₂纳米片对罗丹明6G（R6G）分子表现出强烈的表面增强拉曼光谱（SERS）活性。基于化学增强机制以及R6G与SnSe₂之间的电荷转移图，对增强原理进行了理论解释。结果表明，超薄SnSe₂薄片是高质量的单晶，可用于微分析检测和光电子应用。
