Analytical Chemistry, Center for Electrochemical Sciences (CES), Ruhr-Universität Bochum , Universitätsstrasse 150; D-44780 Bochum, Germany.
ACS Appl Mater Interfaces. 2015 Mar 4;7(8):4883-9. doi: 10.1021/am508946e. Epub 2015 Feb 17.
A high-throughput thin film materials library for Fe-Cr-Al-O was obtained by reactive magnetron cosputtering and analyzed with automated EDX and XRD to elucidate compositional and structural properties. An automated optical scanning droplet cell was then used to perform photoelectrochemical measurements of 289 compositions on the library, including electrochemical stability, potentiodynamic photocurrents and photocurrent spectroscopy. The photocurrent onset and open circuit potentials of two semiconductor compositions (n-type semiconducting: Fe51Cr47Al2Ox, p-type semiconducting Fe36.5Cr55.5Al8Ox) are favorable for water splitting. Cathodic photocurrents are observed at 1.0 V vs RHE for the p-type material exhibiting an open circuit potential of 0.85 V vs RHE. The n-type material shows an onset of photocurrents at 0.75 V and an open circuit potential of 0.6 V. The p-type material showed a bandgap of 1.55 eV, while the n-type material showed a bandgap of 1.97 eV.
通过反应磁控共溅射获得了用于 Fe-Cr-Al-O 的高通量薄膜材料库，并使用自动化 EDX 和 XRD 进行分析，以阐明组成和结构特性。然后，使用自动化光学扫描液滴单元对库中的 289 种成分进行光电化学测量，包括电化学稳定性、动电位光电流和光电流光谱。两种半导体成分（n 型半导体：Fe51Cr47Al2Ox，p 型半导体 Fe36.5Cr55.5Al8Ox）的光电流起始和开路电位有利于水分解。对于开路电位为 0.85 V vs RHE 的 p 型材料，在 1.0 V vs RHE 下观察到阴极光电流。n 型材料在 0.75 V 时显示出光电流的起始，开路电位为 0.6 V。p 型材料的能带隙为 1.55 eV，而 n 型材料的能带隙为 1.97 eV。
