Shi Zhiyuan, Lu Guangyuan, Yang Peng, Wu Tianru, Yin Weijun, Zhang Chao, Jiang Ren, Xie Xiaoming
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences Shanghai 200050 China
School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences 19 A Yuquan Road Beijing 100049 China.
RSC Adv. 2019 Apr 1;9(18):10155-10158. doi: 10.1039/c9ra00595a. eCollection 2019 Mar 28.
Two-dimensional (2D) hexagonal boron nitride (h-BN) is highly appreciated for its excellent insulating performance and absence of dangling bonds, which could be employed to maintain the intrinsic properties of 2D materials. However, controllable synthesis of large scale multilayer h-BN is still very challenging. Here, we demonstrate chemical vapor deposition (CVD) growth of multilayer h-BN by using iron boride (FeB) alloy and nitrogen (N) as precursors. Different from the self-limited growth mechanism of monolayer h-BN on catalytic metal surfaces, with sufficient B source in the bulk, FeB alloy promotes the controllable isothermal segregation of multilayer h-BN by reacting with active N atoms on the surface of the substrate. Microscopic and spectroscopic characterizations prove the high uniformity and crystalline quality of h-BN with a highly orientated layered lattice structure. The achievement of large scale multilayer h-BN in this work would facilitate its applications in 2D electronics and optoelectronics in the future.
二维（2D）六方氮化硼（h-BN）因其优异的绝缘性能和不存在悬空键而备受青睐，可用于保持二维材料的本征特性。然而，大规模多层h-BN的可控合成仍然极具挑战性。在此，我们展示了以硼化铁（FeB）合金和氮（N）作为前驱体，通过化学气相沉积（CVD）法生长多层h-BN。与单层h-BN在催化金属表面的自限生长机制不同，由于体相中存在充足的硼源，FeB合金通过与衬底表面的活性N原子反应，促进了多层h-BN的可控等温偏析。微观和光谱表征证明了h-BN具有高度均匀性和结晶质量，且具有高度取向的层状晶格结构。本工作中大规模多层h-BN的实现将有助于其未来在二维电子学和光电子学中的应用。
