Lee Junghoon, Kang So-Huei, Lee Sang Myeon, Lee Kyu Cheol, Yang Heesoo, Cho Yongjoon, Han Daehee, Li Yongfang, Lee Byoung Hoon, Yang Changduk
Department of Energy Engineering, School of Energy and Chemical Engineering, Perovtronics Research Center, Low Dimensional Carbon Materials Center, Ulsan National Institute of Science and Technology (UNIST), 50 UNIST-gil, Ulju-gun, Ulsan, 44919, Republic of Korea.
Division of Chemical Engineering, Dongseo University, 47, Jurye-ro, Sasang-gu, Busan, 47011, Republic of Korea.
Angew Chem Int Ed Engl. 2018 Oct 8;57(41):13629-13634. doi: 10.1002/anie.201808098. Epub 2018 Sep 17.
To understand the effects rendered on the relevant basic physical properties and device function by controlling the regiochemistry of the cyclopenta[1,2-b:5,4-b']dithiophene-fluorobenzo[c][1,2,5]thiadiazole polymer (hereafter referred to as the CDT-FBT polymer), two polymers, the regiorandom polymer (RA) and regioregular version (RR), respectively, are synthesized and characterized. In addition, an efficient route for synthesizing a key monomer for RR using various synthesis scope and optimizing the reaction conditions is discussed. Although RA exhibits optical, electrochemical, and morphological properties similar to RR, it shows better field-effect transistor (FET) performance. Surprisingly, by employing a capillarity-mediated sandwich-casting process on a nanogrooved substrate, an unprecedented mobility of 17.8 cm V s is obtained for RA-based FETs; this mobility value is almost twofold greater than those of the corresponding RR-based FETs. For the first time, this study challenges previously reported results in that high carrier mobility is related to the high degree of polymer order induced by the backbone regioregularity.
为了了解通过控制环戊二烯并[1,2 - b:5,4 - b']二噻吩 - 氟苯并[c][1,2,5]噻二唑聚合物(以下简称CDT - FBT聚合物)的区域化学对相关基本物理性质和器件功能所产生的影响,分别合成并表征了两种聚合物,即无规立构聚合物(RA)和全同立构聚合物(RR)。此外,还讨论了一种使用各种合成范围并优化反应条件来合成RR关键单体的有效途径。尽管RA表现出与RR相似的光学、电化学和形态学性质,但它显示出更好的场效应晶体管(FET)性能。令人惊讶的是,通过在纳米沟槽衬底上采用毛细作用介导的三明治浇铸工艺,基于RA的FET获得了前所未有的17.8 cm² V⁻¹ s⁻¹的迁移率;该迁移率值几乎是相应基于RR的FET的两倍。本研究首次对先前报道的结果提出挑战,即高载流子迁移率与主链区域规整性诱导的高聚合物有序度有关。