Technische Universität Dresden, Dresden Center for Nanoanalysis (DCN), 01062 Dresden, Germany; Fraunhofer Institute for Ceramic Technologies and Systems (IKTS), 01109 Dresden, Germany.
Fraunhofer Institute for Ceramic Technologies and Systems (IKTS), 01109 Dresden, Germany.
Ultramicroscopy. 2018 Dec;195:47-52. doi: 10.1016/j.ultramic.2018.08.026. Epub 2018 Aug 27.
A novel method to quantify and predict the material contrast using Backscattered Electron (BSE) imaging in Scanning Electron Microscopy (SEM) is presented while using low primary electron beam energies (E). In this study, the parameters for BSE imaging in Low Voltage Scanning Electron Microscopy (LVSEM) are optimized for the layer system AlGaN/GaN, which is typically used in High Electron Mobility Transistors (HEMTs). The layers are imaged at high resolution and the compounds are identified based on the quantitative BSE material contrast between AlGaN and GaN. The quantification process described in this study is based on an analytical description that predicts the material contrast using a function that correlates the effective backscattering coefficient (η) with the atomic number Z.
提出了一种使用低能量初级电子束（E）在扫描电子显微镜（SEM）中通过背散射电子（BSE）成像来量化和预测材料对比度的新方法。在这项研究中，针对通常用于高电子迁移率晶体管（HEMT）的 AlGaN/GaN 层系统优化了低电压扫描电子显微镜（LVSEM）中的 BSE 成像参数。这些层以高分辨率成像，并且根据 AlGaN 和 GaN 之间的定量 BSE 材料对比度来识别化合物。本研究中描述的量化过程基于一种分析描述，该描述使用与原子序数 Z 相关的函数来预测材料对比度，该函数可以预测有效背散射系数（η）。
