Kim Hyonchol, Negishi Tsutomu, Kudo Masato, Takei Hiroyuki, Yasuda Kenji
Kanagawa Academy of Science and Technology, KSP East 310, 3-2-1 Sakado, Takatsu-ku, Kawasaki, Kanagawa 213-0012, Japan.
J Electron Microsc (Tokyo). 2010;59(5):379-85. doi: 10.1093/jmicro/dfq012. Epub 2010 Apr 7.
Discrimination of thin film elements by backscattered electron (BSE) imaging of field emission scanning electron microscope was examined. Incident electron acceleration voltage dependence on thin films' BSE intensities in five elements (Au, Ag, Ge, Cu and Fe) on a silicon substrate was experimentally measured from 3 to 30 kV. Normalization of BSE intensities using the difference between maximum and minimum brightness was proposed and allowed reproducible comparison among the elements. Measured intensities, which have correlation with electron backscattering coefficient against atomic number, indicated the existence of adequate acceleration voltage for improvement of resolution to discriminate different elements, showing the possibility of discriminating at least these six elements simultaneously by BSE imaging with nanometer-scale spatial resolution.
研究了用场发射扫描电子显微镜的背散射电子（BSE）成像对薄膜元素进行鉴别。从3千伏到30千伏，通过实验测量了入射电子加速电压对硅衬底上五种元素（金、银、锗、铜和铁）薄膜的背散射电子强度的依赖性。提出了使用最大亮度与最小亮度之差对背散射电子强度进行归一化的方法，从而能够对各元素进行可重复的比较。测量得到的强度与电子背散射系数和原子序数相关，表明存在合适的加速电压以提高分辨不同元素的分辨率，这显示了通过具有纳米级空间分辨率的背散射电子成像同时鉴别至少这六种元素的可能性。
