Skoupy Radim, Fort Tomas, Krzyzanek Vladislav
Institute of Scientific Instruments of the Czech Academy of Sciences, Kralovopolska 147, CZ-61264 Brno, Czech Republic.
Nanomaterials (Basel). 2020 Feb 15;10(2):332. doi: 10.3390/nano10020332.
The thickness of electron transparent samples can be measured in an electron microscope using several imaging techniques like electron energy loss spectroscopy (EELS) or quantitative scanning transmission electron microscopy (STEM). We extrapolate this method for using a back-scattered electron (BSE) detector in the scanning electron microscope (SEM). This brings the opportunity to measure the thickness not just of the electron transparent samples on TEM mesh grids, but, in addition, also the thickness of thin films on substrates. Nevertheless, the geometry of the microscope and the BSE detector poses a problem with precise calibration of the detector. We present a simple method which can be used for such a type of detector calibration that allows absolute (standardless) measurement of thickness, together with a proof of the method on test samples.
电子透明样品的厚度可以在电子显微镜中使用多种成像技术来测量，如电子能量损失谱（EELS）或定量扫描透射电子显微镜（STEM）。我们将这种方法外推到在扫描电子显微镜（SEM）中使用背散射电子（BSE）探测器。这带来了不仅可以测量透射电镜网格上电子透明样品的厚度，而且还可以测量衬底上薄膜厚度的机会。然而，显微镜和BSE探测器的几何结构给探测器的精确校准带来了问题。我们提出了一种简单的方法，可用于这种类型的探测器校准，该方法允许进行厚度的绝对（无标准）测量，并在测试样品上对该方法进行了验证。
