Latha M, Devi R Aruna, Velumani S, Oza Goldie, Reyes-Figueroa P, Rohini M, Becerril-Juarez I G, Yi Junsin
J Nanosci Nanotechnol. 2015 Nov;15(11):8388-94. doi: 10.1166/jnn.2015.11473.
Chalcopyrite Culn(1-x)Ga(x)Se2 (CIGS) nanoparticles were synthesized by mixing copper (I) chloride (CuCl), Indium (III) chloride (InCl3), gallium (III) chloride (GaCl3) and selenium (Se) in oleylamine (OLA) at 260 degrees C for 4 h under nitrogen atmosphere. The Ga/(In+ Ga) ratio was tuned across the entire stoichiometric range from 0 to 1. X-ray diffraction analysis (XRD) revealed chalcopyrite crystal structure for samples prepared with x = 0, 0.3, 0.5, 0.7 and 1. The lattice parameters a and c decreased linearly with increasing Ga concentration which is consistent with Vegard's law. Raman spectra exhibited A, optical phonon vibrational mode for synthesized nanoparticles which gradually shifted to higher wavenumber with increasing Ga content. Field emission scanning electron microscopy (FE-SEM) and transmission electron microscopy (TEM) images showed irregular as well as hexagonal plate like morphologies in the size range of 100 to 400 nm. High-resolution transmission electron microscopy (HR-TEM) images showed well-defined lattice fringes and d-spacing correspond to (112) plane which gradually decreases with increasing Ga content. The material compositions of synthesized CIGS nanoparticles with x = 0, 0.3, 0.5, 0.7 and 1 were very close to the desired stoichiometry which was confirmed by energy dispersive X-ray analysis (EDAX). Ultraviolet visible near infrared (UV-VIS-NIR) absorption spectra of the synthesized CIGS nanoparticles revealed that the bandgap could be tuned over the range 1 to 1.7 eV by varying the Ga/(In+Ga) ratio.
通过在氮气气氛下于260℃将氯化亚铜（CuCl）、氯化铟（III）（InCl3）、氯化镓（III）（GaCl3）和硒（Se）在油胺（OLA）中混合4小时，合成了黄铜矿型Culn(1-x)Ga(x)Se2（CIGS）纳米颗粒。Ga/(In + Ga) 比率在从0到1的整个化学计量范围内进行调节。X射线衍射分析（XRD）表明，对于x = 0、0.3、0.5、0.7和1制备的样品，具有黄铜矿晶体结构。晶格参数a和c随着Ga浓度的增加而线性降低，这与维加德定律一致。拉曼光谱显示合成纳米颗粒的A光学声子振动模式随着Ga含量的增加逐渐向更高波数移动。场发射扫描电子显微镜（FE-SEM）和透射电子显微镜（TEM）图像显示尺寸范围为100至400nm的不规则以及六边形板状形态。高分辨率透射电子显微镜（HR-TEM）图像显示明确的晶格条纹，且d间距对应于（112）平面，其随着Ga含量的增加而逐渐减小。通过能量色散X射线分析（EDAX）证实，x = 0、0.3、0.5、0.7和1的合成CIGS纳米颗粒的材料组成非常接近所需的化学计量。合成的CIGS纳米颗粒的紫外可见近红外（UV-VIS-NIR）吸收光谱表明，通过改变Ga/(In + Ga) 比率，带隙可在1至1.7eV范围内调节。
