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基于ZnO的薄膜对Ag掺杂及加工结构的磁响应依赖性

Magnetic Response Dependence of ZnO Based Thin Films on Ag Doping and Processing Architecture.

作者信息

G S Santos João, Correa Marcio A, Ferreira Armando, Carvalho Bruno R, B da Silva Rodolfo, Bohn Felipe, Lanceiros-Méndez Senendxu, Vaz Filipe

机构信息

Departamento de Física, Universidade Federal do Rio Grande do Norte, 59078-900 Natal, RN, Brazil.

Centro de Física, Universidade do Minho, 4710-057 Braga, Portugal.

出版信息

Materials (Basel). 2020 Jun 29;13(13):2907. doi: 10.3390/ma13132907.

Abstract

Multifunctional and multiresponsive thin films are playing an increasing role in modern technology. This work reports a study on the magnetic properties of ZnO and Ag-doped ZnO semiconducting films prepared with a zigzag-like columnar architecture and their correlation with the processing conditions. The films were grown through Glancing Angle Deposition (GLAD) co-sputtering technique to improve the induced ferromagnetism at room temperature. Structural and morphological characterizations have been performed and correlated with the paramagnetic resonance measurements, which demonstrate the existence of vacancies in both as-cast and annealed films. The magnetic measurements reveal changes in the magnetic order of both ZnO and Ag-doped ZnO films with increasing temperature, showing an evolution from a paramagnetic (at low temperature) to a diamagnetic behavior (at room temperature). Further, the room temperature magnetic properties indicate a ferromagnetic order even for the un-doped ZnO film. The results open new perspectives for the development of multifunctional ZnO semiconductors, the GLAD co-sputtering technique enables the control of the magnetic response, even in the un-doped semiconductor materials.

摘要

多功能和多响应薄膜在现代技术中发挥着越来越重要的作用。这项工作报道了一项关于采用之字形柱状结构制备的ZnO和Ag掺杂ZnO半导体薄膜的磁性及其与加工条件相关性的研究。通过掠角沉积(GLAD)共溅射技术生长薄膜,以提高室温下的感应铁磁性。已经进行了结构和形态表征,并与顺磁共振测量相关联,这表明铸态和退火薄膜中均存在空位。磁性测量结果显示,随着温度升高,ZnO和Ag掺杂ZnO薄膜的磁有序性发生变化,呈现出从顺磁性(低温下)到抗磁性(室温下)的转变。此外,室温磁性特性表明,即使是未掺杂的ZnO薄膜也具有铁磁有序性。这些结果为多功能ZnO半导体的开发开辟了新的前景,掠角沉积共溅射技术能够控制磁响应,即使在未掺杂的半导体材料中也是如此。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bdc7/7372328/7e711e76dd2c/materials-13-02907-g001.jpg

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