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p-Si/SiO/n-InGaZnO 石墨烯纳米复合材料光电二极管的双功能光响应。

Dual functional photo-response for p-Si/SiO/n-InGaZnO graphene nanocomposites photodiodes.

机构信息

Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University, Nantou 54561, Taiwan.

出版信息

Nanotechnology. 2018 Dec 14;29(50):505202. doi: 10.1088/1361-6528/aae474. Epub 2018 Sep 26.

Abstract

This study demonstrates dual functional hybrid heterojunction photodiodes (PDs) that comprise an amorphous indium gallium zinc oxide (a-IGZO) thin film blended with graphene nanoflakes and a SiO (5 nm)/Si substrate. The PDs exhibit a photo-responsivity of approximately 0.15-0.27 A W under 633 nm illumination, which is much higher than that for a-IGZO based phototransistor in the visible region. The device also gives a long-lasting persistent photocurrent (PPC) when the UV light is extinguished. This results show that the hybrid heterojunction acts as a high performance photodetector for the detection of visible light and provides a universal scenario for development of PPC.

摘要

本研究展示了一种由非晶态氧化铟镓锌(a-IGZO)薄膜与石墨烯纳米片混合而成的双功能杂化异质结光电二极管(PD),以及一个 SiO(5nm)/Si 衬底。该 PD 在 633nm 光照下的光响应度约为 0.15-0.27A/W,明显高于可见区基于 a-IGZO 的光电晶体管。当紫外光熄灭时,该器件还会产生持久的光电流(PPC)。这些结果表明,该杂化异质结可用作可见光探测的高性能光电探测器,并为 PPC 的发展提供了通用场景。

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