Shenyang National Laboratory for Materials Science (SYNL), Institute of Metal Research (IMR), Chinese Academy of Sciences (CAS), No. 72, Wenhua Road, Shenhe District, Shenyang 110016, China.
Nanoscale. 2018 Oct 18;10(40):19039-19045. doi: 10.1039/c8nr05072d.
The multi-wavelength luminescence tailoring of an individual phosphor free of external dopants is of great interest and technologically important for practical applications. Using ZnGa2O4 nanosheets as a target phosphor, we demonstrate how to artificially control the luminescence wavelength centers and their emission intensities to simultaneously emit ultraviolet/blue, green and red light via a feasible defect engineering strategy. Simple high-temperature annealing of hydrothermally synthesized ZnGa2O4 nanosheets leads to the effective tunability of their emission process to present multi-wavelength luminescence due to the structural distortion and the formation of oxygen vacancies. Controlling the annealing temperature and time can further precisely modulate the wavelengths and their corresponding intensities. It is speculated that the migration of Ga into the [GaO4] tetrahedron and the O vacancy are responsible for the multi-wavelength luminescence of the ZnGa2O4 nanosheet phosphor. Finally, the tentative multi-wavelength luminescence behavior of the ZnGa2O4 nanosheet phosphor via defect engineering is discussed based on a series of evidenced experimental observations of XRD, XPS, HRTEM and CL.
在无外部掺杂剂的情况下对单个荧光粉进行多波长发光调控,这对于实际应用具有重要的技术意义和极大的研究兴趣。我们以 ZnGa2O4 纳米片为目标荧光粉,通过一种可行的缺陷工程策略,展示了如何人为地控制发光波长中心及其发射强度,以同时发射紫外/蓝光、绿光和红光。水热合成的 ZnGa2O4 纳米片经过简单的高温退火,由于结构变形和氧空位的形成,导致其发光过程具有有效的可调谐性,从而呈现出多波长发光。通过控制退火温度和时间,可以进一步精确调节波长及其相应的强度。据推测,Ga 进入[GaO4]四面体和 O 空位的迁移是 ZnGa2O4 纳米片荧光粉多波长发光的原因。最后,基于一系列 XRD、XPS、HRTEM 和 CL 的实验观察结果,讨论了 ZnGa2O4 纳米片荧光粉通过缺陷工程实现多波长发光的可能性。