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单源铋(过渡金属)多钒酸盐前体用于大规模合成掺杂 BiVO 光阳极。

Single-Source Bismuth (Transition Metal) Polyoxovanadate Precursors for the Scalable Synthesis of Doped BiVO Photoanodes.

机构信息

Department of Chemistry, University of Cambridge, Lensfield Road, Cambridge, CB2 1EW, UK.

School of Chemical Engineering and Technology, Tianjin University, Tianjin, 30072, China.

出版信息

Adv Mater. 2018 Nov;30(46):e1804033. doi: 10.1002/adma.201804033. Epub 2018 Oct 4.

Abstract

Single-source precursors are used to produce nanostructured BiVO photoanodes for water oxidation in a straightforward and scalable drop-casting synthetic process. Polyoxometallate precursors, which contain both Bi and V, are produced in a one-step reaction from commercially available starting materials. Simple annealing of the molecular precursor produces nanocrystalline BiVO films. The precursor can be designed to incorporate a third metal (Co, Ni, Cu, or Zn), enabling the direct formation of doped BiVO films. In particular, the Co- and Zn-doped photoanodes show promise for photoelectrochemical water oxidation, with photocurrent densities >1 mA cm at 1.23 V vs reversible hydrogen electrode (RHE). Using this simple synthetic process, a 300 cm Co-BiVO photoanode is produced, which generates a photocurrent of up to 67 mA at 1.23 V vs RHE and demonstrates the scalability of this approach.

摘要

单源前体用于通过简单且可扩展的滴铸合成工艺生产用于水氧化的纳米结构 BiVO 光阳极。多金属氧酸盐前体同时包含 Bi 和 V,由市售起始原料一步反应制备得到。分子前体的简单退火可生成纳米晶 BiVO 薄膜。该前体可设计为掺入第三金属(Co、Ni、Cu 或 Zn),从而能够直接形成掺杂的 BiVO 薄膜。特别地,Co 和 Zn 掺杂的光阳极在光电化学水氧化中具有应用前景,在相对于可逆氢电极 (RHE) 为 1.23 V 时的光电流密度>1 mA cm。使用这种简单的合成工艺,制备了 300 cm 的 Co-BiVO 光阳极,其在相对于 RHE 为 1.23 V 时可产生高达 67 mA 的光电流,并展示了该方法的可扩展性。

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