Xu Ji, Gu Zhuyan, Yang Wenxin, Wang Qilong, Zhang Xiaobing
Joint International Research Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast University, Nanjing, 210096, China.
Nanoscale Res Lett. 2018 Oct 4;13(1):311. doi: 10.1186/s11671-018-2736-6.
We report the fabrication and electrical performance of nanoscale vacuum channel transistor (NVCT) based on graphene. Ninety-nanometer-width vacuum nano-channel could be precisely fabricated with standard electron beam lithography process. The optimization and treatment of surface damage and adhesive residue on graphene are carried out by ultrasonic cleaning and thermal annealing. Additionally, in situ electric characteristics are directly performed inside a vacuum chamber of scanning electron microscope (SEM) with the nanomanipulator. By modulating the gate voltage, the NVCT could be switched from off-state to on-state, exhibiting an on/off current ratio up to 10 with low working voltages (< 20 V) and leakage current (< 0.5 nA). Furthermore, the nanoscale vacuum channel could enable to scale down the size of vacuum devices with high integration, making NVCT a promising candidate for high speed applications.
我们报道了基于石墨烯的纳米级真空沟道晶体管（NVCT）的制备及其电学性能。利用标准电子束光刻工艺能够精确制备出宽度为90纳米的真空纳米通道。通过超声清洗和热退火对石墨烯表面损伤和粘附残留进行优化和处理。此外，借助纳米操纵器在扫描电子显微镜（SEM）的真空腔内直接进行原位电学特性测试。通过调制栅极电压，NVCT能够从关态切换到开态，在低工作电压（<20 V）和低漏电流（<0.5 nA）情况下展现出高达10的开/关电流比。此外，纳米级真空通道能够实现具有高集成度的真空器件尺寸缩小，使NVCT成为高速应用的一个有前景的候选者。
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