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基于纳米真空通道结构的场发射电子源优化

Optimization of a Field Emission Electron Source Based on Nano-Vacuum Channel Structures.

作者信息

Xu Ji, Lin Congyuan, Shi Yongjiao, Li Yu, Zhao Xueliang, Zhang Xiaobing, Zhang Jian

机构信息

School of Electronic and Information Engineering, Nanjing University of Information Science & Technology, Nanjing 210044, China.

Joint International Research Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China.

出版信息

Micromachines (Basel). 2022 Aug 8;13(8):1274. doi: 10.3390/mi13081274.

Abstract

Recent discoveries in the field of nanoscale vacuum channel (NVC) structures have led to potential on-chip electron sources. However, limited research has reported on the structure or material parameters, and the superiority of a nanoscale vacuum channel in an electron source has not been adequately demonstrated. In this paper, we perform the structural optimization design of an NVC-based electron source. First, the structure parameters of a vertical NVC-based electron source are investigated. Moreover, the symmetrical NVC structure is further demonstrated to improve the emission current and effective electron efficiency. Finally, a symmetrical nano-vacuum channel structure is successfully fabricated based on simulations. The results show that the anode current exceeds 15 nA and that the effective electron efficiency exceeds 20%. Further miniaturizing the NVC structures in high integration can be utilized as an on-chip electron source, thereby, illustrating the potential in applications of electron microscopes, miniature X-ray sources and on-chip traveling wave tubes.

摘要

纳米级真空通道(NVC)结构领域的最新发现催生了潜在的片上电子源。然而,关于结构或材料参数的研究报道有限,并且纳米级真空通道在电子源中的优势尚未得到充分证明。在本文中,我们对基于NVC的电子源进行结构优化设计。首先,研究了基于垂直NVC的电子源的结构参数。此外,进一步证明了对称NVC结构可提高发射电流和有效电子效率。最后,基于模拟成功制造出对称纳米真空通道结构。结果表明,阳极电流超过15 nA,有效电子效率超过20%。在高集成度下进一步缩小NVC结构可作为片上电子源,从而展示了在电子显微镜、微型X射线源和片上行波管应用中的潜力。

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