Department of Materials Science and Engineering Hongik University 72-1, Sangsu-dong, Mapo-gu, Seoul 04066, Korea.
Nanoscale. 2018 Nov 7;10(41):19383-19389. doi: 10.1039/c8nr05344h. Epub 2018 Oct 11.
We fabricated a functional pentacene/CHNHPbICl perovskite interface where optical gating and field assisted charge retention occur. Using a pentacene/perovskite field effect transistor (FET) test platform, we investigated the interfacial charge transfer associated with optical gating through threshold voltage measurements under illumination. Importantly, bistable electrical conduction in pentacene/perovskite FET devices was achieved as a result of field-induced charge retention at the interface and the origin is discussed to be associated with interfacial charging at the pentacene/perovskite interface. Interfacial contact modification associated with ion migration and other possible effects in the perovskite layer plays a crucial role in forming a functional interface involving organic semiconducting materials.
我们制备了一个功能性的并五苯/CHNHPbICl 钙钛矿界面，其中存在光门控和场辅助电荷保持现象。使用并五苯/钙钛矿场效应晶体管 (FET) 测试平台，我们通过光照下的阈值电压测量研究了与光门控相关的界面电荷转移。重要的是，由于界面处的场诱导电荷保持，在并五苯/钙钛矿 FET 器件中实现了双稳电传导，其起源被讨论为与并五苯/钙钛矿界面处的界面充电有关。与离子迁移和钙钛矿层中其他可能影响相关的界面接触改性在形成涉及有机半导体材料的功能性界面方面起着至关重要的作用。
