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TCNQ 反应前后 CuBTC 薄膜的表面形貌和电学性能。

Surface Morphology and Electrical Properties of CuBTC Thin Films Before and After Reaction with TCNQ.

机构信息

Sandia National Laboratories , Livermore , California 94551 , United States.

Department of Chemistry , Technical University Munich , Lichtenbergstrasse 4 , 85748 Garching , Germany.

出版信息

ACS Appl Mater Interfaces. 2018 Nov 14;10(45):39400-39410. doi: 10.1021/acsami.8b15158. Epub 2018 Nov 5.

Abstract

HKUST-1 or CuBTC (BTC = 1,3,5-benzenetricarboxylate) is a prototypical metal-organic framework (MOF) that holds a privileged position among MOFs for device applications, as it can be deposited as thin films on various substrates and surfaces. Recently, new potential applications in electronics have emerged for this material when HKUST-1 was demonstrated to become electrically conductive upon infiltration with 7,7,8,8-tetracyanoquinodimethane (TCNQ). However, the factors that control the morphology and reactivity of the thin films are unknown. Here, we present a study of the thin-film growth process on indium tin oxide and amorphous Si prior to infiltration. From the unusual bimodal, non-log-normal distribution of crystal domain sizes, we conclude that the nucleation of new layers of CuBTC is greatly enhanced by surface defects and thus difficult to control. We then show that these films can react with methanolic TCNQ solutions to form dense films of the coordination polymer Cu(TCNQ). This chemical conversion is accompanied by dramatic changes in surface morphology, from a surface dominated by truncated octahedra to randomly oriented thin platelets. The change in morphology suggests that the chemical reaction occurs in the liquid phase and is independent of the starting surface morphology. The chemical transformation is accompanied by 10 orders of magnitude change in electrical conductivity, from <10 S/cm for the parent CuBTC material to 10 S/cm for the resulting Cu(TCNQ) film. The conversion of CuBTC films, which can be grown and patterned on a variety of (nonplanar) substrates, to Cu(TCNQ) opens the door for the facile fabrication of more complex electronic devices.

摘要

HKUST-1 或 CuBTC(BTC=1,3,5-苯三甲酸)是一种典型的金属有机骨架(MOF),在器件应用中具有特殊地位,因为它可以在各种基底和表面上沉积成薄膜。最近,当 HKUST-1 在渗透 7,7,8,8-四氰基对醌二甲烷(TCNQ)时被证明具有导电性时,这种材料在电子学方面出现了新的潜在应用。然而,控制薄膜形貌和反应性的因素尚不清楚。在这里,我们在渗透之前研究了在氧化铟锡和非晶硅上的薄膜生长过程。从晶体畴尺寸的异常双峰、非对数正态分布,我们得出结论,新的 CuBTC 层的成核受到表面缺陷的极大增强,因此难以控制。然后我们表明,这些薄膜可以与甲醇 TCNQ 溶液反应,形成配位聚合物 Cu(TCNQ)的致密薄膜。这种化学转化伴随着表面形貌的剧烈变化,从以截角八面体为主的表面变为随机取向的薄片状。形貌的变化表明,化学反应发生在液相中,与起始表面形貌无关。化学转化伴随着电导率 10 个数量级的变化,从母体 CuBTC 材料的<10 S/cm 到生成的 Cu(TCNQ)薄膜的 10 S/cm。可以在各种(非平面)基底上生长和图案化的 CuBTC 薄膜向 Cu(TCNQ)的转化为更复杂的电子设备的简便制造开辟了道路。

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