Pintor-Monroy Maria Isabel, Barrera Diego, Murillo-Borjas Bayron L, Ochoa-Estrella Francisco Javier, Hsu Julia W P, Quevedo-Lopez Manuel A
Department of Materials Science and Engineering , The University of Texas at Dallas , 800W. Campbell Road , Richardson , Texas 75080 , United States.
Departamento de Investigación en Física , Universidad de Sonora , Rosales y Luis Encinas , Hermosillo , Sonora 83000 , Mexico.
ACS Appl Mater Interfaces. 2018 Nov 7;10(44):38159-38165. doi: 10.1021/acsami.8b08095. Epub 2018 Oct 30.
One of the major limitations of oxide semiconductors technology is the lack of proper p-type materials to enable devices such as pn junctions, light-emitting diodes, and photodetectors. This limitation has resulted in an increased research focus on these materials. In this work, p-type NiO thin films with tunable optical and electrical properties as well as its dependence with oxygen pressure during pulsed laser deposition are demonstrated. The control of NiO films resistivity ranged from ∼10 to ∼10 Ω cm, showing a p-type behavior with E tuning from 3.4 to 3.9 eV. Chemical composition and the resulting band diagrams are also discussed. The all-oxide NiO -GaO pn junction showed very low leakage current, an ideality factor of ∼2, 10 on/off ratio, and 0.6 V built-in potential. Its J- V temperature dependence is also analyzed. C- V measurements demonstrate diodes with a carrier concentration of 10 cm for the GaO layer, which is fully depleted. These results show a stable, promising diode, attractive for future photoelectronic devices.
氧化物半导体技术的主要局限性之一是缺乏合适的p型材料来制造诸如pn结、发光二极管和光电探测器等器件。这一局限性导致了对这些材料的研究关注度增加。在这项工作中，展示了具有可调光学和电学性质的p型NiO薄膜及其在脉冲激光沉积过程中与氧压的关系。NiO薄膜的电阻率控制在约10至约10Ω·cm之间，呈现出p型行为，其能隙从3.4 eV调至3.9 eV。还讨论了化学成分和由此产生的能带图。全氧化物NiO -GaO pn结显示出非常低的漏电流、约为2的理想因子、10的开/关比和0.6 V的内建电势。还分析了其J-V与温度的关系。电容-电压（C-V）测量表明，对于完全耗尽的GaO层，二极管的载流子浓度为10 cm 。这些结果表明了一种稳定、有前景的二极管，对未来的光电器件具有吸引力。
