Ivanova Tatyana, Harizanova Antoaneta, Shipochka Maria, Vitanov Petko
Central Laboratory of Solar Energy and New Energy Sources, Bulgarian Academy of Sciences, Tzarigradsko Chaussee 72, 1784 Sofia, Bulgaria.
Institute of General and Inorganic Chemistry, Bulgarian Academy of Sciences, Acad. G, Bonchev St., bl. 11, 1113 Sofia, Bulgaria.
Materials (Basel). 2022 Feb 25;15(5):1742. doi: 10.3390/ma15051742.
In our study, transparent and conductive films of NiO were successfully deposited by sol-gel technology. NiO films were obtained by spin coating on glass and Si substrates. The vibrational, optical, and electrical properties were studied as a function of the annealing temperatures from 200 to 500 °C. X-ray Photoelectron (XPS) spectroscopy revealed that NiO was formed at the annealing temperature of 400 °C and showed the presence of Ni states. The optical transparency of the films reached 90% in the visible range for 200 °C treated samples, and it was reduced to 76-78% after high-temperature annealing at 500 °C. The optical band gap of NiOx films was decreased with thermal treatments and the values were in the range of 3.92-3.68 eV. NiO thin films have good p-type electrical conductivity with a specific resistivity of about 4.8 × 10 Ω·cm. This makes these layers suitable for use as wideband semiconductors and as a hole transport layer (HTL) in transparent solar cells.
在我们的研究中，通过溶胶-凝胶技术成功沉积了透明导电的NiO薄膜。通过旋涂法在玻璃和硅衬底上获得了NiO薄膜。研究了振动、光学和电学性质随200至500°C退火温度的变化。X射线光电子能谱（XPS）表明，在400°C的退火温度下形成了NiO，并显示出Ni态的存在。对于200°C处理的样品，薄膜在可见光范围内的光学透明度达到90%，在500°C高温退火后降至76 - 78%。NiOx薄膜的光学带隙随热处理而减小，其值在3.92 - 3.68 eV范围内。NiO薄膜具有良好的p型导电性，比电阻率约为4.8×10Ω·cm。这使得这些层适合用作宽带半导体以及透明太阳能电池中的空穴传输层（HTL）。
