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基于淀粉电解质门控氧化物枝晶晶体管模拟树突整合。

Dendrite Integration Mimicked on Starch-Based Electrolyte-Gated Oxide Dendrite Transistors.

机构信息

Key Laboratory of Graphene Technologies and Applications of Zhejiang Province, Ningbo Institute of Materials Technology and Engineering , Chinese Academy of Sciences , Ningbo 315201 , Zhejiang , People's Republic of China.

School of Material Science & Engineering , Shanghai University , Shanghai 200444 , People's Republic of China.

出版信息

ACS Appl Mater Interfaces. 2018 Nov 21;10(46):40008-40013. doi: 10.1021/acsami.8b16495. Epub 2018 Nov 7.

DOI:10.1021/acsami.8b16495
PMID:30362346
Abstract

Emulation of dendrite integration on brain-inspired hardware devices is of great significance for neuromorphic engineering. Here, solution-processed starch-based electrolyte films are fabricated, demonstrating strong proton gating activities. Starch gated oxide dendrite transistors with multigates are fabricated, exhibiting good electrical performances. Most importantly, dendrite modulation, spatiotemporal dendrite integration, and linear/superlinear dendrite algorithm are demonstrated on the proposed dendrite transistor. Furthermore, a low energy consumption of ∼1.2 pJ is obtained for triggering a synaptic response on the dendrite transistor. Accordingly, the signal-to-noise ratio is still as high as ∼2.9, indicating a high sensitivity of ∼4.6 dB. Such artificial dendrite transistors have potential applications in brain-inspired neuromorphic platforms.

摘要

在脑启发硬件设备上模拟树突整合对于神经形态工程具有重要意义。在这里,制备了溶液处理的基于淀粉的电解质薄膜,展示了强大的质子门控活性。制备了具有多栅的淀粉门控氧化物树突晶体管,表现出良好的电性能。最重要的是,在提出的树突晶体管上演示了树突调制、时空树突整合以及线性/超线性树突算法。此外,在树突晶体管上触发突触响应的能量消耗低至约 1.2 pJ。因此,信号噪声比仍然高达约 2.9,表明灵敏度高达约 4.6 dB。这种人工树突晶体管在脑启发神经形态平台中有潜在的应用。

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