Yoo E J, Kim J H, Song J H, Yoon T S, Choi Y J, Kang C J
Department of Physics, Myongji University, Gyeonggi 449-728, Republic of Korea.
J Nanosci Nanotechnol. 2013 Sep;13(9):6395-9. doi: 10.1166/jnn.2013.7615.
Resistive random access memory (ReRAM) with conductor-dielectric-conductor structures has attracted extensive attention for next generation nonvolatile memory devices. The resistive switching effect has been observed in various materials, such as metal oxides and chalcogenide oxides. From our findings, we advocate the resistive switching characteristics of zinc oxide thin film, due to its simple composition and ease of manipulation. In this study, we investigated the current-voltage (I-V) characteristics of the Cr/ZnO/Cr capacitor structure. The Cr electrode and ZnO thin film were deposited by radio frequency magnetron sputtering at room temperature. The top electrode layers were patterned by 100 microm x 100 microm. The fabricated devices of the Cr/ZnO/Cr structures exhibited bipolar switching behavior. In addition, using the Cr-coated AFM tip replaced with the top electrode enabled us to map the local current image and measure the current flow at each point. This gave us more information to verify the resistive switching mechanism of ZnO thin film.
具有导体-电介质-导体结构的电阻式随机存取存储器（ReRAM）因其可用于下一代非易失性存储设备而受到广泛关注。在各种材料中都观察到了电阻开关效应，比如金属氧化物和硫属化物氧化物。基于我们的研究结果，我们主张氧化锌薄膜具有电阻开关特性，这是由于其组成简单且易于操作。在本研究中，我们研究了Cr/ZnO/Cr电容器结构的电流-电压（I-V）特性。Cr电极和ZnO薄膜在室温下通过射频磁控溅射沉积。顶部电极层采用100微米×100微米的图案化。所制备的Cr/ZnO/Cr结构器件表现出双极开关行为。此外，用涂有Cr的原子力显微镜（AFM）探针取代顶部电极，使我们能够绘制局部电流图像并测量每个点的电流流动。这为我们验证ZnO薄膜的电阻开关机制提供了更多信息。
