Fakultät Physik/DELTA, TU Dortmund University, D-44221 Dortmund, Germany.
Nanotechnology. 2019 Jan 11;30(2):025702. doi: 10.1088/1361-6528/aae8c9. Epub 2018 Nov 1.
We report on a study of the Co intercalation process underneath the [Formula: see text] R30° reconstructed 6H-SiC(0001) surface for Co film-thicknesses in a range of 0.4-12 nm using a combination of surface sensitive imaging, diffractive, and spectroscopic methods. In situ photoemission electron microscopy reveals a dependence of the intercalation temperature on the Co film-thickness. Using low energy electron diffraction and photoemission spectroscopy (XPS), we find that the SiC surface reconstruction is partially lifted and transformed. We show that the [Formula: see text] R30° reconstruction does not prevent silicide formation for Co film-thicknesses ≥0.4 nm according to XPS and x-ray absorption spectra. Our results indicate that the silicide formation is self-limited to a thin interface region and is followed by Co intercalation between graphene and silicide. Furthermore, we analyze the magnetic properties using x-ray magnetic circular dichroism at the Co L-edge. In-plane magnetization is observed for all analyzed film-thicknesses. For ultra-thin Co films, self-assembled magnetic wires with a width of the order of 100 nm form at the step-edges.
我们报告了在 [Formula: see text] R30°重构的 6H-SiC(0001)表面下 Co 插层过程的研究,使用了表面敏感成像、衍射和光谱方法,研究了 Co 薄膜厚度在 0.4-12nm 范围内的情况。原位光电子显微镜揭示了插层温度对 Co 薄膜厚度的依赖性。使用低能电子衍射和光电子能谱(XPS),我们发现 SiC 表面重构部分被抬起并转化。我们表明,根据 XPS 和 X 射线吸收谱,[Formula: see text] R30°重构不会阻止 Co 薄膜厚度≥0.4nm 的硅化物形成。我们的结果表明,硅化物的形成是自我限制在一个薄的界面区域,随后是石墨烯和硅化物之间的 Co 插层。此外,我们使用 Co L 边的 X 射线磁圆二色性分析了磁性性质。对于所有分析的薄膜厚度,都观察到面内磁化。对于超薄 Co 薄膜,在台阶处形成了宽度约为 100nm 的自组装磁性线。