Institute for Chemical Research, Kyoto University, Uji, Kyoto, 611-0011, Japan.
Center for Spintronics Research Network, Osaka University, Toyonaka, Osaka, 560-8531, Japan.
Phys Rev Lett. 2018 Oct 19;121(16):167202. doi: 10.1103/PhysRevLett.121.167202.
In this Letter, we show the demonstration of a sequential antiferromagnetic memory operation with a spin-orbit-torque write, by the spin Hall effect, and a resistive read in the CoGd synthetic antiferromagnetic bits, in which we reveal the distinct differences in the spin-orbit-torque and field-induced switching mechanisms of the antiferromagnetic moment, or the Néel vector. In addition to the comprehensive spin torque memory operation, our thorough investigations also highlight the high immunity to a field disturbance as well as a memristive behavior of the antiferromagnetic bits.
在这封信件中，我们展示了通过自旋霍尔效应实现的 CoGd 合成反铁磁位元的自旋轨道转矩写入、顺序反铁磁记忆操作演示，以及电阻式读取，揭示了反铁磁矩或奈尔矢量的自旋轨道转矩和场致切换机制的明显差异。除了全面的自旋转矩记忆操作，我们的深入研究还突出了反铁磁位元对磁场干扰的高抗扰性以及忆阻行为。
