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基底取向对双层多铁性薄膜中局域磁电耦合的影响。

Effect of substrate orientation on local magnetoelectric coupling in bi-layered multiferroic thin films.

机构信息

Institute for Materials Science and Center for Nanointegration Duisburg-Essen (CENIDE), University of Duisburg-Essen, Universitätsstraße 15, 45141 Essen, Germany.

出版信息

Nanoscale. 2018 Nov 15;10(44):20618-20627. doi: 10.1039/c8nr06041j.

Abstract

In this study we explore the prospect of strain-mediated magnetoelectric coupling in CoFe2O4-BaTiO3 bi-layers as a function of different interfacial boundary conditions. Pulsed laser deposition fabricated thin films on Nb:SrTiO3(100) and Nb:SrTiO3(111) single crystal substrates were characterized in terms of their peculiarities related to the structure-property relationship. Despite the homogeneous phase formation in both films, transmission electron microscopy showed that the bi-layers on Nb:SrTiO3(100) exhibit a higher number of crystallographic defects when compared to the films on Nb:SrTiO3(111). This signifies an intrinsic relationship of the defects and the substrate orientation. To analyze the consequences of these defects on the overall magnetoelectric coupling of the bi-layered films, piezoresponse force microscopy was performed in situ with an applied magnetic field. The local magnetic field dependence of the piezoresponse was obtained using principal component analysis. A detailed analysis of this dependence led to a conclusion that the bi-layers on Nb:SrTiO3(111) exhibit better strain-transfer characteristics between the magnetic and the piezoelectric layer than those which were deposited on Nb:SrTiO3(100). These strain transfer characteristics correlate well with the interface quality and the defect concentration. This study suggests that in terms of overall magnetoelectric coupling, the Nb:SrTiO3(111) grown bi-layers are expected to outperform their Nb:SrTiO3(100) grown counterparts.

摘要

在这项研究中,我们探索了 CoFe2O4-BaTiO3 双层中应变介导的磁电耦合的前景,作为不同界面边界条件的函数。通过脉冲激光沉积在 Nb: SrTiO3(100) 和 Nb: SrTiO3(111) 单晶衬底上制备了薄膜,并对其与结构-性能关系相关的特性进行了表征。尽管两种薄膜都形成了均匀的相,但透射电子显微镜显示,与 Nb: SrTiO3(111) 上的薄膜相比,Nb: SrTiO3(100) 上的双层具有更高数量的晶体学缺陷。这表明缺陷与衬底取向之间存在内在关系。为了分析这些缺陷对双层膜整体磁电耦合的影响,在施加磁场的情况下原位进行了压电力显微镜测量。使用主成分分析获得了压电力对局部磁场的依赖性。对这种依赖性的详细分析得出结论,与沉积在 Nb: SrTiO3(100) 上的双层相比,沉积在 Nb: SrTiO3(111) 上的双层在磁和压电层之间具有更好的应变传递特性。这些应变传递特性与界面质量和缺陷浓度密切相关。这项研究表明,就整体磁电耦合而言,Nb: SrTiO3(111) 生长的双层有望优于 Nb: SrTiO3(100) 生长的双层。

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