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多晶硅薄膜热扩散率的原位测试

In-Situ Testing of the Thermal Diffusivity of Polysilicon Thin Films.

作者信息

Gu Yi-Fan, Zhou Zai-Fa, Sun Chao, Li Wei-Hua, Huang Qing-An

机构信息

Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing 210096, China.

出版信息

Micromachines (Basel). 2016 Oct 1;7(10):174. doi: 10.3390/mi7100174.

DOI:10.3390/mi7100174
PMID:30404348
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC6189791/
Abstract

This paper presents an intuitive yet effective in-situ thermal diffusivity testing structure and testing method. The structure consists of two doubly clamped beams with the same width and thickness but different lengths. When the electric current is applied through two terminals of one beam, the beam serves as thermal resistor and the resistance () varies as temperature rises. A delicate thermodynamic model considering thermal convection, thermal radiation, and film-to-substrate heat conduction was established for the testing structure. The presented in-situ thermal diffusivity testing structure can be fabricated by various commonly used micro electro mechanical systems (MEMS) fabrication methods, i.e., it requires no extra customized processes yet provides electrical input and output interfaces for in-situ testing. Meanwhile, the testing environment and equipment had no stringent restriction, measurements were carried out at normal temperatures and pressures, and the results are relatively accurate.

摘要

本文提出了一种直观且有效的原位热扩散率测试结构及测试方法。该结构由两根宽度和厚度相同但长度不同的双端固支梁组成。当电流通过其中一根梁的两个端子时,该梁作为热阻器,其电阻()随温度升高而变化。针对该测试结构建立了一个考虑热对流、热辐射以及薄膜与衬底热传导的精细热力学模型。所提出的原位热扩散率测试结构可通过各种常用的微机电系统(MEMS)制造方法制造,即无需额外的定制工艺,同时还为原位测试提供电输入和输出接口。此外,测试环境和设备没有严格限制,在常温常压下进行测量,结果相对准确。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6295/6189791/a109ada9ced0/micromachines-07-00174-g007a.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6295/6189791/07546b235632/micromachines-07-00174-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6295/6189791/8c7b0eba2bf1/micromachines-07-00174-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6295/6189791/5b65bed3ab5a/micromachines-07-00174-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6295/6189791/0bc59a2b9868/micromachines-07-00174-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6295/6189791/05716526355d/micromachines-07-00174-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6295/6189791/baedd5b0103f/micromachines-07-00174-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6295/6189791/a109ada9ced0/micromachines-07-00174-g007a.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6295/6189791/07546b235632/micromachines-07-00174-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6295/6189791/8c7b0eba2bf1/micromachines-07-00174-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6295/6189791/5b65bed3ab5a/micromachines-07-00174-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6295/6189791/0bc59a2b9868/micromachines-07-00174-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6295/6189791/05716526355d/micromachines-07-00174-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6295/6189791/baedd5b0103f/micromachines-07-00174-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6295/6189791/a109ada9ced0/micromachines-07-00174-g007a.jpg

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本文引用的文献

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Piezoresistive effect in p-type 3C-SiC at high temperatures characterized using Joule heating.利用焦耳热对高温下p型3C-SiC中的压阻效应进行表征。
Sci Rep. 2016 Jun 28;6:28499. doi: 10.1038/srep28499.
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通过融合纳米结构多孔薄膜和 IDEs-微热芯片实现快速响应、高灵敏度和低功耗的化学传感器。
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