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外延石墨烯上低功函数金属的表面电势和薄膜质量

Surface potential and thin film quality of low work function metals on epitaxial graphene.

作者信息

DeJarld Matthew, Campbell Paul M, Friedman Adam L, Currie Marc, Myers-Ward Rachael L, Boyd Anthony K, Rosenberg Samantha G, Pavunny Shojan P, Daniels Kevin M, Gaskill D K

机构信息

US Naval Research Laboratory, Washington, District of Columbia, 20375, USA.

Laboratory for Physical Sciences, College Park, MD, 20740, USA.

出版信息

Sci Rep. 2018 Nov 7;8(1):16487. doi: 10.1038/s41598-018-34595-1.

Abstract

Metal films deposited on graphene are known to influence its electronic properties, but little is known about graphene's interactions with very low work function rare earth metals. Here we report on the work functions of a wide range of metals deposited on n-type epitaxial graphene (EG) as measured by Kelvin Probe Force Microscopy (KPFM). We compare the behaviors of rare earth metals (Pr, Eu, Er, Yb, and Y) with commonly used noble metals (Cr, Cu, Rh, Ni, Au, and Pt). The rare earth films oxidize rapidly, and exhibit unique behaviors when on graphene. We find that the measured work function of the low work function group is consistently higher than predicted, unlike the noble metals, which is likely due to rapid oxidation during measurement. Some of the low work function metals interact with graphene; for example, Eu exhibits bonding anomalies along the metal-graphene perimeter. We observe no correlation between metal work function and photovoltage, implying the metal-graphene interface properties are a more determinant factor. Yb emerges as the best choice for future applications requiring a low-work function electrical contact on graphene. Yb films have the strongest photovoltage response and maintains a relatively low surface roughness, ~5 nm, despite sensitivity to oxidation.

摘要

已知沉积在石墨烯上的金属膜会影响其电子特性,但对于石墨烯与极低功函数稀土金属的相互作用却知之甚少。在此,我们报告了通过开尔文探针力显微镜(KPFM)测量的沉积在n型外延石墨烯(EG)上的多种金属的功函数。我们将稀土金属(Pr、Eu、Er、Yb和Y)的行为与常用贵金属(Cr、Cu、Rh、Ni、Au和Pt)的行为进行了比较。稀土膜氧化迅速,且在石墨烯上时表现出独特行为。我们发现,与贵金属不同,低功函数组的测量功函数始终高于预测值,这可能是由于测量过程中的快速氧化所致。一些低功函数金属与石墨烯相互作用;例如,Eu在金属 - 石墨烯周边表现出键合异常。我们观察到金属功函数与光电压之间没有相关性,这意味着金属 - 石墨烯界面特性是一个更具决定性的因素。对于未来需要在石墨烯上形成低功函数电接触的应用而言,Yb是最佳选择。Yb膜具有最强的光电压响应,并且尽管对氧化敏感,但仍保持相对较低的表面粗糙度,约为5纳米。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/33c4/6220296/854c45cb45f8/41598_2018_34595_Fig1_HTML.jpg

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