Han Sang-Hyun, Baek Seung-Hye, Lee Hyun-Jin, Kim Hyunsoo, Lee Sung-Nam
Department of Nano-Optical Engineering, Korea Polytechnic University, Siheung, 15073, Republic of Korea.
School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju, 54896, Republic of Korea.
Sci Rep. 2018 Nov 8;8(1):16547. doi: 10.1038/s41598-018-34869-8.
III-nitride semiconductor-based light-emitting diodes (LEDs) have superior physical properties such as high thermal stability and brightness, for application to solid-state lighting sources. With the commercialization of GaN-based LEDs, improving LED reliability is important because they can be affected by electrostatic discharge, reverse leakage, and breakdown. However, research on the reverse bias characteristics of GaN-based LEDs is insufficient. We studied the reverse breakdown mechanism and demonstrated that a local breakdown can form a conductive channel in GaN-based LEDs, which can be expanded to a novel planar-type LED structure without an n-contact electrode. Furthermore, we found that this approach can be applied to AC-controllable light-emitting devices without any AC-DC converter.
基于III族氮化物半导体的发光二极管（LED）具有诸如高热稳定性和高亮度等优异的物理特性，适用于固态照明光源。随着基于氮化镓（GaN）的LED商业化，提高LED的可靠性很重要，因为它们可能会受到静电放电、反向漏电和击穿的影响。然而，关于基于GaN的LED反向偏置特性的研究还不够充分。我们研究了反向击穿机制，并证明局部击穿可以在基于GaN的LED中形成导电通道，这可以扩展到一种没有n接触电极的新型平面型LED结构。此外，我们发现这种方法可以应用于无需任何AC-DC转换器的交流可控发光器件。
