Liu Yi-Jung, Tsai Tsung-Yuan, Yen Chih-Hung, Chen Li-Yang, Tsai Tsung-Han, Huang Chien-Chang, Chen Tai-You, Hsu Chi-Hsiang, Liu Wen-Chau
Department of Electrical Engineering, Institute of Microelectronics, National Cheng-Kung University, University Road, Taiwan, Taiwan, 70101, Republic of China.
Opt Express. 2010 Feb 1;18(3):2729-42. doi: 10.1364/OE.18.002729.
GaN-based light-emitting diodes (LEDs) grown on c-plane vicinal sapphire substrates are fabricated and characterized. Based on the material quality and electrical properties, the LED with a 0.2 degrees tilt sapphire substrate (device A) exhibits the lowest defect density and high performance, while the LED with a 1.0 degrees tilt sapphire (device D) exhibits the highest one. At 2 mA, the extremely enhanced output power of 23.3% indicates of the reduction of defect-related nonradiative recombination centers in active layers for the device A. At 60 mA, the improved value is up to 45.7%. This is primarily caused by the formation of indium quantum dots in MQW which provides an increased quantum efficiency.
制备并表征了在c面倾斜蓝宝石衬底上生长的氮化镓基发光二极管（LED）。基于材料质量和电学性能，具有0.2度倾斜蓝宝石衬底的LED（器件A）表现出最低的缺陷密度和高性能，而具有1.0度倾斜蓝宝石的LED（器件D）表现出最高的缺陷密度。在2 mA时，器件A的输出功率极大增强了23.3%，这表明有源层中与缺陷相关的非辐射复合中心减少。在60 mA时，改善值高达45.7%。这主要是由于多量子阱中铟量子点的形成提高了量子效率。
