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由废弃的二硅化钼加热元件制备的单晶MoO微米和毫米带。

Single-Crystal MoO Micrometer and Millimeter Belts Prepared from Discarded Molybdenum Disilicide Heating Elements.

作者信息

Hou Xiaolong, Huang Juntong, Liu Mingqiang, Li Xibao, Hu Zhihui, Feng Zhijun, Zhang Meng, Luo Junming

机构信息

School of Materials Science and Engineering, Nanchang Hangkong University, Nanchang, Jiangxi Province, 330063, P. R. China.

The State Key Laboratory of Refractories and Metallurgy, Wuhan University of Science and Technology, Wuhan, 430081, China.

出版信息

Sci Rep. 2018 Nov 13;8(1):16771. doi: 10.1038/s41598-018-34849-y.

Abstract

Single-crystal MoO micrometer to millimeter even centimeter belts were prepared via a novel route of oxidizing a discarded molybdenum disilicide heating element at 1000 °C for 3 h. The morphology and structure features, and growth mechanism of the products were evidently investigated by X-ray diffraction, Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy, scanning electron microscopy, and transmission electron microscopy. The results indicated that the powdery and fibrous products were typical α-MoO belt-like structures which size could develop from micrometer to several millimeter even centimeter in length and up to 0.5 mm in width. It should be formed preferentially along the [001] direction via layer by layer growth to form 1-D single MoO belts by vapor-solid mechanism. Thermal and luminescence properties of the products were revealed by thermogravimetric analysis and differential thermal analysis and photoluminescence spectra that the resultant α-MoO belts had good thermal stability and characteristics of luminescence with a central peak at 481 nm. The MoO belts are of good potential being applied to luminescent and high temperature devices.

摘要

通过一种新颖的方法,在1000 °C下将废弃的二硅化钼加热元件氧化3小时,制备出了单晶氧化钼微米级到毫米级甚至厘米级的带材。通过X射线衍射、傅里叶变换红外光谱、X射线光电子能谱、扫描电子显微镜和透射电子显微镜对产物的形貌、结构特征及生长机理进行了深入研究。结果表明,粉末状和纤维状产物为典型的α-MoO带状结构,其长度尺寸可从微米级发展到几毫米甚至厘米级,宽度可达0.5 mm。它应通过气-固机制沿[001]方向逐层生长优先形成一维单条MoO带。通过热重分析、差热分析和光致发光光谱揭示了产物的热性能和发光性能,结果表明所得的α-MoO带具有良好的热稳定性和发光特性,中心峰位于481 nm。MoO带在发光和高温器件方面具有良好的应用潜力。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d357/6233177/7a66621eed41/41598_2018_34849_Fig1_HTML.jpg

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