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β-Mo2C 薄膜的合成。

Synthesis of β-Mo(2)C thin films.

机构信息

Department of Chemical Engineering, Colorado School of Mines, Golden, Colorado 80401, USA.

出版信息

ACS Appl Mater Interfaces. 2011 Feb;3(2):517-21. doi: 10.1021/am101095h. Epub 2011 Jan 20.

Abstract

Thin films of stoichiometric β-Mo(2)C were fabricated using a two-step synthesis process. Dense molybdenum oxide films were first deposited by plasma-enhanced chemical vapor deposition using mixtures of MoF(6), H(2), and O(2). The dependence of operating parameters with respect to deposition rate and quality is reviewed. Oxide films 100-500 nm in thickness were then converted into molybdenum carbide using temperature-programmed reaction using mixtures of H(2) and CH(4). X-ray diffraction confirmed that molybdenum oxide is completely transformed into the β-Mo(2)C phase when heated to 700 °C in mixtures of 20% CH(4) in H(2). The films remained well-adhered to the underlying silicon substrate after carburization. X-ray photoelectron spectroscopy detected no impurities in the films, and Mo was found to exist in a single oxidation state. Microscopy revealed that the as-deposited oxide films were featureless, whereas the carbide films display a complex nanostructure.

摘要

采用两步合成工艺制备了化学计量比β-Mo(2)C 薄膜。首先通过使用 MoF(6)、H(2)和 O(2)混合物的等离子体增强化学气相沉积来沉积致密的氧化钼薄膜。综述了操作参数对沉积速率和质量的影响。然后,使用 H(2)和 CH(4)混合物通过程序升温反应将厚度为 100-500nm 的氧化膜转化为碳化钼。X 射线衍射证实,当在 20%CH(4)在 H(2)混合物中加热到 700°C 时,氧化钼完全转化为β-Mo(2)C 相。碳化后,薄膜仍然很好地附着在下面的硅衬底上。X 射线光电子能谱未检测到薄膜中的杂质,并且发现 Mo 仅存在单一的氧化态。显微镜显示,沉积的氧化膜无特征,而碳化膜则显示出复杂的纳米结构。

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